WSO/UV-LSS Detector with large dimension MCP Baosheng Zhao* National Astronomical Observatories of CAS * E-mail : open@opt. ac. cn
Contents 1. Research Bases 2. Project Demonstration & Design 3. Key Technologies and Research Contents
1. Bases EUV (30. 4 nm) Imager Based on WSA Detector - Supported by the Directional Project of Knowledge Innovation Project of Chinese Academy of Sciences
1. Bases Schematic Diagram of the System
1. Bases • Curved MCP Photo of the Curved MCP Curvature Radius: 70 mm Effective Area: φ50 mm Thickness: 0. 8~1 mm; Gain: 104 Patent Certificate
1. Bases The planar structure sketch, entire and local magnified photos of WSA collector (from left to right)
1. Bases Schematic of WSA Collector
1. Bases Gain Distribution
1. Bases Image of Dark-count Gain Distribution of Dark-count
1. Bases Imaging Result in our lab
1. Bases 1024× 1024, spatial resolution superior to 150μm (a)Used WSA; (b)used CCD Camera
1. Bases UV Image Intensifier(110~200 nm) • Photocathode: Cs. I
2. Project Demonstration & Design Requirements of the spacial weak UV detecting: 1) Solar Blind; 2) Photon Counting Mode; 3) High Detecting Quantum Efficiency; 4) High Local Dynamic Range.
2. Project Demonstration & Design Detecting Wavelength Range: 110 nm-320 nm Photocathode: 110 nm-175 nm, Cs. I 170 nm-320 nm, Csn. Te Schematic of the Detector
2. Project Demonstration & Design dimension : 150 X 40(mm 3) Input dimension: 106 X 6(mm 2) Spatial resolution: 40μm Rectangle Profile of Detector
2. Project Demonstration & Design Profile of Detector
2. Project Demonstration & Design Technics of Vacuum Shell Design Ceramic parts custom-making Heat treatment Ceramic metallization Metal parts custom-making Heat treatment Nickel deposition Laser soldering Leak detection Inspection /storage Final assembly
2. Project Demonstration & Design Technics of Mg 2 F Window Design O p t i c a l manufacture Inspection N i c k e l deposition Photolithography Indium sealed edge metallization（Ni. Cr＋Au）
2. Project Demonstration & Design WSA Collector Design 1) MCP – Ge Layer – WSA Collector 2) MCP – WSA Collector Design Draft of the WSA Collector
2. Project Demonstration & Design Curved MCP Effective Area: Indexes Key Technological 106× 6 mm 2 Size: 112× 12 mm 2 Gain: 104 Pore Diameter: 12. 5 micron Ratio of Length to Diameter : 40: 1 Thickness: Resistance: 0. 5 mm 40 ～ 80 MΩ Curvature Radius: 1000 mm
2. Project Demonstration & Design Photocathode a) 100－175 nm photocathode Cs. I b) 170－320 nm photocathode Cs 2 Te
2. Project Demonstration & Design Electronic Readout Subsytem
3. Key technologies and research contents Key technologies： ØHigh quantum efficiency and large format photocathode preparation technology; ØCylinder MCP preparation technology; ØHigh resolution WSA electron collector preparation technology; ØHigh voltage power supply with low ripple and high stability and control circuit technology; ØLow noise charge sensitive preamplifier, pulse shaping circuit, sample and hold circuit, AD convertor, DSP and FPGA digital technologies; ØDetector calibration technology.
3. Key technologies and research contents Research contents： ØLSS detector scheme; ØDetector structure design; ØDetector electro-optical system design; ØSpherical (curved) surface MCP manufacture; ØWSA structure design; ØDetector electron read-out system design; ØHigh voltage power supply design with high stability and low ripple; ØAuto gain control circuit system design for high voltage power supply; ØDetector system calibration.
Thank you for your attention!
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