St. Petersburg State Polytechnic University Institute of Physics, Nanotechnology and Telecommunications Radiophysics Department Transistor Created by Ageev Ruslan Group 23421/1 2014
Discovery The discovery of the transistor was announced in 1948 by three scientists from the Bell Telephone Laboratories: William Shockley (1910– 1989), John Bardeen (1908– 1991), and Walter Brattain (1902– 1987).
The structure of the FET Source - the electrode from which the channel includes the main charge carriers; Drain - electrode through which the canal goes from the main charge carriers; Gate - electrode serving to control the cross-section of the channel.
Classification of field-effect transistors
The main parameters · Voltage cut-off; · Steepness characteristics. It shows how to change the drain current of milliamperes when the gate voltage changes at 1; · The output impedance of the FET; · Input impedance.
The application of transistors · Digital and analog integrated circuits · Tracking and logic devices · Energy saving circuits · Flash memory
It is quite possible that we would not have the personal computers and other digital devices, if not invented FET Digital Camera Laptop
Now we understand how much influence on mankind one little invention
Thank you for your attention Ruslan Ageev tel. 8 -953 -352 -71 -44 http: //vk. com/id 12194588
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