NA Silicon Wafer Committee Liaison Report Updated June

NA Silicon Wafer Committee Liaison Report Updated June 03, 2014

Meeting Information • Last meeting – Tuesday, April 1, 2014, NA Spring Standards • Intel, Santa Clara, CA • Next meeting – Tuesday, July 8, 2014, SEMICON West • San Francisco, CA • www. semi. org/standards for the latest schedule update

NA Silicon Wafer Committee Chairmen Dinesh Gupta /STA Noel Poduje /SMS

Silicon Wafer Committee C: Dinesh Gupta - STA C: Noel Poduje – SMS VC: Mike Goldstein – Intel TE: Murray Bullis – Materials & Metrology Specifications Int’l Annealed Wafers TF Dinesh Gupta -STA Int’l 450 mm Wafers TF Mike Goldstein - Intel Int’l Epitaxial Wafers TF Dinesh Gupta - STA Int’l Polished Wafers TF Murray Bullis Materials & Metrology Int’l SOI Wafers TF Bich-Yen Nguyen – SOITEC Metrology Int’l Advanced Wafer Geometry TF Noel Poduje – SMS Jaydeep Sinha – KLATencor Int’l Automated Advance Surface Inspection TF Kurt Haller - KLA-Tencor Committee Int’l Test Methods TF Dinesh Gupta - STA Int’l Terminology TF Murray Bullis Materials & Metrology

Ballot results • Documents passed committee review – Doc. 5663, Reapproval of SEMI M 58 -1109, Test Method for Evaluating DMA Based Particle Deposition Systems and Processes • Being processed for publication – Doc. 5665, Line Item Revision of SEMI MF 26 -0305 (Reapproved 0211), Test Method for Determining the Orientation of a Semiconductive Single Crystal • Being processed for publication

TFOF Changes • From: – Int’l Advanced Surface Inspection TF • To: – Int’l Automated Advance Surface Inspection TF

New SNARFs [1] • Int’l AWG TF – Doc. 5702, Line Item Revision of SEMI M 68 (ZDD) – Doc. 5704, Reapproval of SEMI M 43 Guide for Reporting Wafer Nanotopography – Doc. 5705, Reapproval of SEMI M 67 (ESFQR, ESFQD, and ESBIR Metrics ) – Doc. 5706, Reapproval of SEMI M 70 (Partial Wafer Site Flatness)

New SNARFs [2] • Int’l Test Methods TF – Doc. 5313, SNARF was modified • From: Line Item Revision of SEMI MF 1535 -0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance • To: Revision of SEMI MF 1535 -0707 Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

New SNARFs [3] • Int’l Test Methods TF – Doc. 5703: New Standard: Guide for Carrier Recombination Lifetime Measurements in Electronic Grade Silicon – Doc. 5707: Revision of SEMI M 40 -1109, Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers with title change to Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers

New SNARFs [4] • Int’l Polished Wafer – Doc. 5604, SNARF was modified • From: Revision to SEMI M 1 -0114, Specification for Polished Single Crystal Silicon Wafer (Re: Addition of Notchless 450 mm Wafers) • To: Line Item Revision to SEMI M 1 -0114, Specification for Polished Single Crystal Silicon Wafer and SEMI M 20 -0110, Practice for Establishing a Wafer Coordinate System (Re: Addition of Notchless 450 mm Wafers)

New SNARFs [5] • Int’l Polished Wafer – Doc. 5604, Line Item Revision of SEMI M 1 -0114, Specifications for Polished Single Crystal Silicon Wafers ( To correct references to test methods for measurement of front surface chemistry)

Ballots approved for Cycle 3 -2014 • Doc. 5404, Withdrawal of SEMI MF 657 -0707 E Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning • Doc. 5539, Revision of SEMI MF 1390 -0707 (Reapproved 0512) With Title Change To: Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Non. Contact Scanning • Doc. 5662, Revision of SEMI M 35 -1107, Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection • Doc. 5077, Revision of SEMI M 40 -1109, Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers with title change to Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers

Ballots approved for Cycle 4 -2014 • Doc. 5604, Line Item Revision to SEMI M 1 -0414, Specification for Polished Single Crystal Silicon Wafer and SEMI M 20 -0110, Practice for Establishing a Wafer Coordinate System – (Subj: Addition of Notchless 450 mm Wafers) • Doc. #5701, Line Item Revision of SEMI M 1 -0414, Specifications for Polished Single Crystal Silicon Wafers – (Subj: To correct references to test methods for measurement of front surface chemistry) • Doc. 5666, Revision of SEMI MF 928 -314, Test Methods for Edge Contour of Circular Wafers and Rigid Disk Substrates

Int’l 450 mm Wafer TF • Leader: Mike Goldstein (Intel) • TF will continue to support the 450 mm program. – eliminating the notch and replacing it with backside fiducial marks – reducing the edge exclusion zone from 2 mm to 1. 5 mm.

Int’l Advanced Wafer Geometry TF [1] • Leaders: – Noel Poduje (SMS) & Jaydeep Sinha (KLA-Tencor) • Discussions: – Revision to SEMI M 78 Guide for determining Nanotopography to add adjusting filter size and analysis area – New Standard: Guide for Wafer Dimensional Metrology Based on Interferometric Areal Image Acquisition Technology

Int’l Advanced Wafer Geometry TF [2] • Doc. 5654, Line Item Revision of SEMI M 49, Guide for Specifying Geometry Measurements Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations • EE reduction from 2 mm to 1. 5 mm at 16 nm node • Ballot issued for cycle 2 -14 for review at West • Doc. 5539, Revision of SEMI MF 1390 -0707 (Reapproved 0512) , Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Non-Contact Scanning • Ballot issued for cycle 3 -14 for review at West

Int’l Advanced Wafer Geometry TF [3] • Performing 5 Year Review: – Doc. 5702, Line Item Revision of SEMI M 68 (ZDD) – Doc. 5704, Reapproval of SEMI M 43 Guide for Reporting Wafer Nanotopography – Doc. 5705, Reapproval of SEMI M 67 (ESFQR, ESFQD, and ESBIR Metrics ) – Doc. 5706, Reapproval of SEMI M 70 (Partial Wafer Site Flatness)

Int’l Annealed Wafer TF • Leader: – Dinesh Gupta (STA) • SEMI M 57 -0414 Specifications for Silicon Annealed Wafers – Reviewing new version of M 57 and will make modification

Int’l Epitaxial Wafer TF • Leader: – Dinesh Gupta (STA) • SEMI M 62 -0514, Specifications for Silicon Epitaxial Wafers – Reviewing new version of M 57 and will make modification to add the 16 nm technology node

Int’l Automated Advance Surface Inspection TF [1] • Leader: – Kurt Haller (KLA-Tencor) • Doc. 5662, Revision of SEMI M 35 -1107, Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection – Ballot issued in cycle 3 -14 for review at West • Doc. 5663, Reapproval of SEMI M 58 -1109, Test Method for Evaluating DMA Based Particle Deposition Systems and Processes – Ballot passed at NA Spring, pending publication

Int’l Automated Advance Surface Inspection TF [2] • 5 Year reviewing – SEMI ME 1392 -1109, Guide for Angle Resolved Optical Scatter Measurements on Specular or Diffuse Surfaces • Decision to revise or issue for reapproval will be discussed at the next meeting

Int’l Polished Wafer TF [1] • Leader: – Murray Bullis (Materials & Metrology) • Ballots issued for cycle 4 for review at West – Doc. 5604, Line Item Revision to SEMI M 1 -0414, Specification for Polished Single Crystal Silicon Wafer and SEMI M 20 -0110, Practice for Establishing a Wafer Coordinate System (Re: Addition of Notchless 450 mm Wafers) – Doc. 5701, Line Item Revision of SEMI M 1 -0414, Specifications for Polished Single Crystal Silicon Wafers (to correct references to test methods for measurement of front surface chemistry)

Int’l Polished Wafer TF [2] • Doc. 5655, Line Item Revision of SEMI M 11013, Specifications for Polished Single Crystal Silicon Wafers (Re: Updating 450 mm wafers edge exclusion) • Still drafting, waiting for the outcome of – Doc. 5604, Line Item Revision to SEMI M 10414, Specification for Polished Single Crystal Silicon Wafer and SEMI M 20 -0110, Practice for Establishing a Wafer Coordinate System » (Re: Addition of Notchless 450 mm Wafers)

Int’l SOI Wafer TF • Leader: – Bich-Yen Nguyen (SOITEC) • Discussions: – MEMS/NEMS group for collaboration and needs – 3 D-IC group for needs and application of SOI – High resistivity SOI specification – Photonic devices - will contact OPSIS for presentation at SEMICON West

Int’l Terminology TF • Leader: – Murray Bullis (Materials & Metrology) • Doc. 5664, Line Item Revision M 59 -0211, Terminology for Silicon Technology – Removing two terms from SEMI M 59: • 1/e lifetime ( e) and primary mode lifetime ( 1) – Ballot issued in cycle 1 -14 for review at West

Int’l Test Methods TF [1] • Leader: – Dinesh Gupta (STA) • Doc. 5665, Line Item Revision to SEMI MF 26 -0305 (Reapproved 0211), Test Method for Determining the Orientation of a Semiconductive Single Crystal, to correct an error in equations • Ballot passed at NA Spring, pending publication • Doc. 5607, Revision of SEMI MF 673 -0305 (Reapproved 0611), Measuring Resistivity of Semiconductor Slices of Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage • Ballot issued in cycle 2 -14 for review at SEMICON West

Int’l Test Methods TF [2] • Ballot issued in cycle 3&4 for review at West – Doc. #5404, Withdrawal of SEMI MF 657 -0707 E, Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning – Doc. #5666, Revision of SEMI MF 928 -0314, Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates – Doc. #5707, Revision of SEMI M 40 -1109, With Title Change To: Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers

Int’l Test Methods TF [3] • Drafting – Doc. 5313 B, Revision of SEMI MF 1535 -0707, Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance – Doc. 5703, New Standard: Guide for Carrier Recombination Lifetime Measurements in Electronic Grade Silicon

Int’l Test Methods TF [4] • Voted to be inactive due to lack of support – SEMI MF 1723 -1104, Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy – SEMI MF 1724 -1104, Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy – SEMI MF 1708 -1104, Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies

Question? • For more information, please contact Kevin Nguyen at knguyen@semi. org