6cd1b4312d0956836654d9ba7ecc1bcf.ppt
- Количество слайдов: 39
Microwave & RF Dernières évolutions des technologies d’assemblage microélectronique en 3 D Presented by Dr Christian Val Founder of 3 D Plus 408 rue Hélène Boucher 78532 BUC (France) cval@3 d-plus. com Paris 5 Avril 2012 1
PLAN - Introduction - Technology of the Stacking of Rebuilt Wafers - Comparison between Po. P/W 2 W and WDo. D - Applications - Conclusion 2
Company Highlights § Spin off from Thales (1996), from September 2011, 3 D Plus is a 100% subsidiary of HEICO company § Strong R&D from the 3 D Plus launching § Active patenting policy § Space certifications from CNES, ESA, NASA, JPL, JAXA, CAST etc… § ISO 9001 from 2003 § Exportation: 90% § Workforce : 115 § R and D : 12 including 6 Ph. D 3
PLAN - Introduction - Technology to Stack the Rebuilt Wafers - Comparison between Po. P/W 2 W and WDo. D Technologies - Applications - Conclusion 4
3 D Existing Packaging Technology Chip-on-Chip Wire bonding -Amkor -ASE -STATS -SPIL -… Wafer Level Stacking Edge connection Bus metal -3 D Plus -Irvine Sensors Bus silver epoxy -VCI Rebuilt Wafer to Rebuilt wafer -Freescale -Infineon -Etc… Thru-Polymer Via « TPV » -3 D Plus Wafer to wafer Thru-Si Via « TSV » -Samsung -IBM -INTEL -ST Micro -Micron -Toshiba -- Etc… 5
Limits of Wafer to Wafer with TSV § Non multi sourcing wafers § Need for smallest possible Via (2µm Ø, leads to a thickness of 20 µm or less Yield of these filled via is low (redondancy is expected) § Difficulties with Si. P, since die of different sizes § TSV stresses (keep out zone between 20 to 200 µm) § Unfortunately impossible to have 100% good wafer very low global yield 6
WDo. D ™(1) initial criteria § § § Use of multi sourcing wafers Stacking of 10 levels per mm, now 20 levels/mm in development Size: 100µm around the larger Die Stacking of Known Good Rebuilt Wafer (KGRW) Possibility to stack Known Good Burn-In Rebuilt Wafer § Parallel processing/Panelization from A to Z (1) Wirefree Die on Die – Trade Mark from 3 D Plus 7
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3 D PLUS Proprietary and Confidential 12
3 D PLUS Proprietary and Confidential 13
Po. P and WDo. D package
16/03/20189 February 2009 3 D PLUS Proprietary and Confidential 15
16/03/2018 9 February 2009 3 D PLUS Proprietary and Confidential 16
16/03/20189 February 2009 3 D PLUS Proprietary and Confidential 17
PLAN - Introduction - Stacking of Rebuilt Wafers - Comparison between Po. P/W 2 W and WDo. D Technologies - Applications - Conclusion 18
Po. P and WDo. D package
PLAN - Introduction - Stacking of Rebuilt Wafers - Comparison between Po. P/W 2 W and WDo. D Technologies - Applications - Conclusion 20
NICHE APPLICATIONS MEDICAL APPLICATIONS: - Micro camera for Endoscopy (2, 6 x 2, 6 mm) - Modules for Pacemaker, Neuro stimulator - Module for 40 silicon capacitors on 20 levels - Earing aids - X Ray camera with Philips/ Germany - European program/ e-CUBES with pacemaker - European program/ e-BRAINS with MEMS INDUSTRIAL APPLICATIONS “Structural Health Monitoring” - Abandoned Sensors for avionics - Stacking of FPGA (bare die) + DDR 3 + PROM for military and industrial applications
16/03/20189 February 2009 3 D PLUS Proprietary and Confidential 22
16/03/20189 February 2009 3 D PLUS Proprietary and Confidential 23
Contribution to e-Cubes – Program (from NXP Belgium) § Going further than flip-chip – 3 D Si. P integration for hearing aids – Through Silicon Vias (TSV) – Edge Vertical Routing (Based on 3 DPlus technology) PICS & CMOS dies thinned to ~100 um Through Silicon Via (TSV) Redistribution Layer (RDL) Edge vertical routing (3 Dplus technology)
16/03/20189 February 2009 3 D PLUS Proprietary and Confidential 30
Application WDo. D with MEMS – Opposite Twin Cavities Technology for MEMS (Zero Stress, Full Hermeticity)
Structural Health Monitoring Abandoned Sensors
Aero Demonstrator Partnership workflow –e-CUBES Program Existing components + energy scavenger 3 D+ TAS RTOS dies Specs IZM IMEC EPFL chipset Philips U. Paderborn Alcate l Flexfoil Delay lines Very complex problem for 100 s sensors To be checked by simulations WUB Innovation proof of concept OK Demonstration for Y 3 TBC Tyndall
3 D PLUS Demonstrator e-CUBES Program 3 D PLUS Module
Abandoned Sensors e. CUBES Program • 1 RH and 1 P transducers on top • 1 T transducer on each face • Pads on bottom for connexions to the RF block • Pads at the top (energy + “rescue operations”) • Specific anti-screwing fixation • Internal cube = 8 mm X 14 mm (Target: 6 x 6 mm/ 0, 22 cm 3)
WDo. D™ Status § Proof of Concept – completed (2002 -2005) – European funding (25 M$) with CEA/LETI, AXALTO, ST Microelectronics, 3 D PLUS, … § Process Development & Optimization of WDo. D (from 2006 up to Feb 2009) with NXP/Philips semiconductor § From Feb 2009 Prototyping with the RCP Process from Freescale/Phoenix § Functional Prototypes with Nanium. Stack of 4 DDR 3/JEDEC Qualification (end of 2011) 36
PLAN - Introduction - Stacking of Rebuilt Wafers - Comparison between Po. P/W 2 W and WDo. D Technologies - Applications - Conclusion 37
Conclusion and perspectives § Miniaturization for Consumer, Medical and security domains demands very high interconnection densities and low costs. Reconsidering former experiences: Hybrids, Multichip Modules, Wafer Scale Integration (20 years ago), Po. P instead of Pi. P; we learned that the yield constitued an important part of the production costs. § The WDo. D process only allows to stack Known Good Rebuilt Wafers. § Several applications in the medical and industrial and large volume areas have been presented. § This important densification of 10, soon 20 levels per mm, allows to launch extremely ambitious applications in the field of System in Package for Memory-only and Si. P for Smart cards and Mobile phone. 38
Ultra Dense 3 -D Micro system with WDo. D Thank you for your attention www. 3 d-plus. com 39
6cd1b4312d0956836654d9ba7ecc1bcf.ppt