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MICROELECTRONICS ENGINEERING GROUP Contact: Assoc. Prof. Yasar Gurbuz Faculty of Engineering & Natural Sciences MICROELECTRONICS ENGINEERING GROUP Contact: Assoc. Prof. Yasar Gurbuz Faculty of Engineering & Natural Sciences Sabanci University Orhanli, 34956 Tuzla, Istanbul, Turkey Tel: +90 216 - 483 9533, Fax: +90 216 - 483 9550 e-mail: [email protected] edu

MAJOR AREAS OF RESEARCH Microelectromechanical Systems (MEMS): Modeling, simulation and fabrication of silicon micromachined MAJOR AREAS OF RESEARCH Microelectromechanical Systems (MEMS): Modeling, simulation and fabrication of silicon micromachined mechanical systems; pressure, acceleration sensors, ultrasonic transducers, RF-MEMS; resonators, oscillators, filters. Integrated Circuits and VLSI Design and Technology: RF/Analog/Digital/Mixed Signal ICs, So. C ASIC Design, Hardware realization of dedicated DSP architectures, High Speed A/D, D/A Converters, Modeling and Simulation of Semiconductor Devices. Photonics and Optoelectronics: High Speed Electro. Optic Modulators, Chip-scale Photonic ICs, Wavelength Division Multiplexing (WDM) Fiber Optic Network Components, Quantum Dots, Quantum Cyptography, Optical Thin Film Coating and Fiber Optic Sensors. MICROELECTRONICS GROUP

Ayhan BOZKURT E-mail : abozkurt@sabanciuniv. edu Phone : +90 216 483 9537 Fax : Ayhan BOZKURT E-mail : [email protected] edu Phone : +90 216 483 9537 Fax : +90 216 483 9550 Education • Ph. D. in Electrical and Electronics Eng. , Bilkent University, Ankara, Turkey, 1994 -2000 • MSc. in Electrical and Electronics Eng. , Bilkent University, Ankara, Turkey, 1992 -1994 • BSc. in Electrical and Electronics Eng. , Bilkent University, Ankara, Turkey, 1987 -1992 Research Interest • Acoustic Non-destructive Evaluation (NDE) • Modeling and Fabrication of Microelectromechanical Systems (MEMS) • Transducer Design for Ultrasonic Imaging • IC Design for Sensor Interfaces • Low-level Microprocessor/DSP Programming MICROELECTRONICS GROUP

Cem ÖZTÜRK E-mail : cemozturk@sabanciuniv. edu Phone : +90 216 483 9593 Fax : Cem ÖZTÜRK E-mail : [email protected] edu Phone : +90 216 483 9593 Fax : +90 216 483 9550 Education • Ph. D, Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA, 2002 • MSc, Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA, 1997 • BSc, Electrical and Electronics Engineering, Bogazici University, Istanbul, Turkey, 1995 Work Experience • Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (Sep 2003 present) • Assistant Research Engineer, Electrical and Computer Engineering Dept. , University of California, Santa Barbara, CA, USA (Mar 2002 - Aug 2003) • Research Assistant, Electrical and Computer Engineering Dept. , University of California, Santa Barbara, CA, USA (Sep 1995 - Mar 2002) Research Interests • Photonics, Chip-scale Photonic Integrated Circuits, Optoelectronic filters and add/drop Mux/De. Mux, WDM Fiber Optic Networks and Components, Ultra-high speed electrooptic and quantum well modulators, Semiconductor and hybrid integrated processing technologies. MICROELECTRONICS GROUP

İlker HAMZAOĞLU E-mail : hamzaoglu@sabanciuniv. edu Phone : +90 216 483 9577 Fax : İlker HAMZAOĞLU E-mail : [email protected] edu Phone : +90 216 483 9577 Fax : +90 216 483 9550 Education • Ph. D, Computer Science, University of Illinois at Urbana-Champaign, IL, USA, 1999 • MSc, Computer Engineering, Bogazici University, Istanbul, Turkey, 1993 • BSc, Computer Engineering, Bogazici University, Istanbul, Turkey, 1991 Work Experience • Faculty Member, Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (Sep 2003 -present) • Principle Staff Engineer (Dec 2002 - Aug 2003), Senior Staff Engineer (Aug 1999 - Dec 2002), Multimedia Architecture Lab, Motorola Labs, Schaumburg, IL, USA • Visiting Lecturer, Computer Science Dept. , University of Illinois at Urbana-Champaign, IL, USA (Summer 1998, Summer 1999) • Teaching and Research Assistant, Computer Science Dept. and Electrical and Computer Engineering Dept. , University of Illinois at Urbana-Champaign, IL, USA (Jan 1994 - July 1999) Research Interests Embedded Systems (Hw/Sw) Design, Digital So. C ASIC Design, Computer-aided Design, Verification and Testing for Digital So. C ASICs, Embedded Microprocessor Architectures, Parallel Processing. MICROELECTRONICS GROUP

Meriç ÖZCAN E-mail : meric@sabanciuniv. edu Phone : +90 216 483 9506 Fax : Meriç ÖZCAN E-mail : [email protected] edu Phone : +90 216 483 9506 Fax : +90 216 483 9550 Education • Ph. D, Electrical Engineering, Stanford University, Stanford, CA, USA, 1991 • MSc, Electrical Engineering, Stanford University, Stanford, CA, USA, 1986 • BSc, Electrical Engineering, Middle East Technical University, Ankara, Turkey, 1984 Work Experience • Sabanci University, Faculty of Engineering & Natural Sciences, Microelectronics Group (02 -present) • K 2 Optronics Inc. , Director of Advanced Research, Sunnyvale, CA, (00 -01) • NASA Ames Research Center, Research Scientist, Moffett Field, CA (91 -00) • Stanford University, Research Assistant, Stanford, CA (84 -91) Research Interests • Analog and Digital Electronic Design, High Frequency Electronic Design, Optoelectronics, Fiber Optic Communication, Quantum Electronics, Quantum Computing, Quantum Cryptography. MICROELECTRONICS GROUP

Yasar GÜRBÜZ E-mail : yasar@sabanciuniv. edu Phone : +90 216 483 9533 Fax : Yasar GÜRBÜZ E-mail : [email protected] edu Phone : +90 216 483 9533 Fax : +90 216 483 9550 Education • 1997 Ph. D. , Electrical Engineering, Vanderbilt University, Nashville, TN • 1993 MSc, Electrical Engineering, Vanderbilt University, Nashville, TN • 1990 BSc, Electronics Engineering, Erciyes University, Kayseri - Turkey Work Experience • 2000 - Faculty Member, Sabanci University, FENS • 1999 -2000 Project Manager, Aselsan Inc. , MGEO, Ankara • 1997 -1999 Senior Research Associate, Vanderbilt University • 1991 -1997 Research / Teaching Assistant, Vanderbilt University Research Interests • Microelectromechanical Systems (MEMS) • Analog and RF Integrated Circuits • Solid-State Sensors • Microelectronics Devices • Semiconductor Technology Memberships: IEEE Solid-State Circuits Society, SPIE MICROELECTRONICS GROUP

Chem/Bio Pressure Light Thermal Electrical etc. LAB CAPABILITIES Idea Design/Simulation Mask Making (outsourcing) Etching Chem/Bio Pressure Light Thermal Electrical etc. LAB CAPABILITIES Idea Design/Simulation Mask Making (outsourcing) Etching (wet/dry) Patterning Wire Bonding Packaging Deposition/Sputter Testing (Atmospheric Pressure) Sensors & Transducers Testing (Sub-Atmospheric Environment) MICROELECTRONICS GROUP Vacuumed Cavity Cleaned Silicon Substrate

Design and Simulation Lab Software: Hardware: • SUN Workstations • 3 x ULTRA-10 (1 Design and Simulation Lab Software: Hardware: • SUN Workstations • 3 x ULTRA-10 (1 GByte RAM) • 4 x ULTRA-5 (512 MByte RAM) • 24 x HP Pentium IV PCs MICROELECTRONICS GROUP • Europractice • Cadence / Synopsys • HSpice, Saber • Mems. Cap, Mem. Cad, Ansys

Class 1000 Clean Room MISC. FACILITIES MASK ALIGNER Specs • Exposure Optics UV: 300 Class 1000 Clean Room MISC. FACILITIES MASK ALIGNER Specs • Exposure Optics UV: 300 nm • Automated delivery system • Variable Dose • Separate View Aligners Capability • 1 um resolution • Microscope • Ultrasonic Cleaner • Balance • Hot Plate Stirrer • Small Capacity Furnace, 3 zone (1200 o. C) WET BENCH • Class 100 Hood • Hot plate • Spinner • Ultrasonic Cleaner • Etch Basin • DI Water & dry air MICROELECTRONICS GROUP SPUTTER Specs. : • Vacuum: 10 -7 Torr • Temperature 350 o. C • RF Power (600 W) , DC Power (500 W) • 20 – 100 k. Hz variable frequency pulse • 3 Gas inputs • Load Lock Chamber • Computer Controlled Deposition Capability: • Metals • Oxides • Reactive coating • oxides & nitrides RIE Specs: ICP, 1500 W, 13. 56 MHz • RIE, 600 W • 4 Gas Lines • 0. 05 -0. 5 mbar • End Point Detector Etch Capabilities: Oxide • Nitride • Semiconductor (Si. Ga. As etc…) • Metals

Test and Measurement Lab • IC Probe Station • Surface Profiler • Logic Analysis Test and Measurement Lab • IC Probe Station • Surface Profiler • Logic Analysis System • Semiconductor Parameter Analyzer • 500 MHz Infiniium Oscilloscope • 1 GHz Infiniium Oscilloscope • Spectrum Analyzer • Impedance Analyzer • RF Signal Generator • Sampling Oscilloscope • Arbitrary Waveform Generator • Pulse Generator MICROELECTRONICS GROUP

SPONSORED RESEARCH EXAMPLES and WORKING ENVIRONMENT • TARGET, EU-6 th Frame Work Project (2004 SPONSORED RESEARCH EXAMPLES and WORKING ENVIRONMENT • TARGET, EU-6 th Frame Work Project (2004 -2008) (http: //www. target-net. org): European research in the field of microwave power amplifiers for broadband wireless access (including RF-semiconductor technology, RF-IC, RF-MEMS, RF system architectures) • RF-MEMS for wireless appications: • MINAEAST-NET, EU-6 th Frame Work Project Resonators, Filters and Oscillators (2004 -2006), http: //www. minaeast. net involving micro and nanotechnologies. • MEMS-Based Chemical Sensors and Interface Electronics (Mixed-Signal IC) (TUBITAK, 2001 -2004) • High-Voltage Front-End IC Design CMUT (TUBITAK, 2003 -2005) Sensor Read-out CDR PLL • High-Voltage Front-End IC Design CMUT • MEMS-Based Chemical Sensors DC-DC Conv. Sensor Read-out IC & MEMS Design Desi and simulation lab. simulati Class-1000 Clean Room Test and Characterization (RF/microwave, small/large power and optical)

IEEE 802. 11 a-b: - Bit rate: 110 and 220 Mb/s - Power consumption: IEEE 802. 11 a-b: - Bit rate: 110 and 220 Mb/s - Power consumption: 100 m. W and 250 m. W - Bandwidth ≥ 500 MHz - Number of channels: 5 -Total signal power: +20 d. Bm -- Adjacent channel power ratio, (ACPR) better than 30 d. Bc at 500 MHz bandwidth -PAE PA unit: better than 40% -Reference PLL from 3. 35 GHz to 10. 35 GHz, step 250 MHz - MEMS based pass-band filter: 3. 1 -10. 6 GHz, roll-off selectivity 20 d. B/500 MHz.

MOSFET structure Source Gate Drain High Electron Mobility Transistor E B C Heterostructure. Bipolar. MOSFET structure Source Gate Drain High Electron Mobility Transistor E B C Heterostructure. Bipolar. Transistor

RF Devices E MOSFET structure Source Gate B Drain C B C High Electron RF Devices E MOSFET structure Source Gate B Drain C B C High Electron Mobility Transistor Heterostructure. Bipolar. Transistor RF ICs PLL / VCO Power Amplifer LNA Mixer TRx – RF System MICROELECTRONICS GROUP

RF MEMS for TRx Resonators Filters Switches VC-Capacitors Inductors MICROELECTRONICS GROUP RF MEMS for TRx Resonators Filters Switches VC-Capacitors Inductors MICROELECTRONICS GROUP

RF Integrated Circuits and MEMS for TRx PLL / VCO Power Amplifer Mixer LNA RF Integrated Circuits and MEMS for TRx PLL / VCO Power Amplifer Mixer LNA MICROELECTRONICS GROUP

Micro and Nanotechnologies going Eastern Europe through Networking INCO-CT-2004 -510470 Project Objectives MINAEAST-NET is Micro and Nanotechnologies going Eastern Europe through Networking INCO-CT-2004 -510470 Project Objectives MINAEAST-NET is intended to be a tool for achieving a better integration of eight ACCs (Romania, Hungary, Poland, Slovenia, Slovakia, Lithuania, Bulgaria and Turkey), in projects for FP 6 on Micro and Nano Technologies. • MINAEAST-NET will be established as the premier source of information about resources and results in MNT from ACCs and about the strong points of the ACC organisations. • Organisations and companies from MS (and world-wide) that are looking for partners in MNT for any kind of projects, should address their needs to MINAEAST-NET and MINAEAST-NET will definitely find the best partner suited for them. Acad. Dan Dascalu, Project coordinator Email: [email protected] ro www. imt. ro • For all MNT interested organisations from ACC, MINAEAST-NET will be the main source of MNT specific project and partnership information: MNT related information about EC calls, international networking activities, partnership search from abroad. Turkey contact point: • MINAEAST-NET will support interaction between ACC and MS organisations to initiate FP 6 proposals through organising meetings, workshops and support travel cost. Yasar Gurbuz, Sabanci University www. sabanciuniv. edu Email: [email protected] edu • MINAEAST-NET will also be the little helper with any questions concerning proposal set-up and regulations for ACC organisations all that especially for MNT.

Micromachined Chemical Gas Sensor and Signal Read. Out Integrated Circuitry Material characterisation Electrical characterisation Micromachined Chemical Gas Sensor and Signal Read. Out Integrated Circuitry Material characterisation Electrical characterisation Micromachined Gas Sensor Read-out IC Back-side etched Sensors Close-up view Sensors

MEMS for Ultrasonic Imaging Capacitive Micromachined Ultrasonic Transducer (CMUT) Annular Array used in IVUS MEMS for Ultrasonic Imaging Capacitive Micromachined Ultrasonic Transducer (CMUT) Annular Array used in IVUS Imaging Ultrasound Generation Echo Detection MICROELECTRONICS GROUP

MEMS for Ultrasonic Imaging High-Voltage Front-End IC Design CMUT MICROELECTRONICS GROUP MEMS for Ultrasonic Imaging High-Voltage Front-End IC Design CMUT MICROELECTRONICS GROUP

Pending Projects • Micro and Nano. Technologies for Automotive Applications - EU 6 th Pending Projects • Micro and Nano. Technologies for Automotive Applications - EU 6 th Frame. Work • Sensors / MEMS and IC / VLSI Systems • Protein microchip design; cardiovascular risk assessment platform – DPT / TÜBİTAK MICROELECTRONICS GROUP

Ultra Wide Band (UWB) Wall Penetrating Radar • Ultra wideband technology has its origins Ultra Wide Band (UWB) Wall Penetrating Radar • Ultra wideband technology has its origins in the development of time domain (impulse response) techniques for the characterization of linear, time invariant microwave structures. • A short pulse in time has a large bandwidth in frequency domain hence it is called ultra wide band waveform. • UWB radar also uses radiated and reflected electromagnetic waves to detect, locate and identify targets. • The advantage of using UWB waveforms for radar include better spatial resolution, detectable materials penetration, easier target information recovery from reflected signals and lower probability of interference than with the narrowband signals. • Here we are developing a hand held behind the wall moving object/persons detector for intelligence and surveillance. Same system can also be used for people detection under the ruins after an earthquake for example…. MICROELECTRONICS GROUP

Ultra Wide Band (UWB) Wall Penetrating Radar Block Diagram of the system currently under Ultra Wide Band (UWB) Wall Penetrating Radar Block Diagram of the system currently under development: Transmitter Code Generator Pulse Generator I Programmable Time Delay Adjustable Delay Clock Oscillator Pulse Generator II Pulse length <1 ns Energy concentrated in 2 -6 GHz band Average Power < 10 u. W Receiver Correlator Baseband Signal Processing S/H MICROELECTRONICS GROUP Integrator Multiplier

Hybrid Tunable Wavelength Division Multiplexed (WDM) Filter (MOST Research Center funded by DARPA @ Hybrid Tunable Wavelength Division Multiplexed (WDM) Filter (MOST Research Center funded by DARPA @ UCSB) • Low loss and low cost due to fiber matched Polymer waveguide, fast tuning through Ga. As electrooptic effect (nanosec. s) • Fast thermoelectric control (microsec. s) • Arbitrary filter spectra and multiwavelength operatiom easily achiavable. MICROELECTRONICS GROUP

In. P-and Ga. As-based Optical Microresonator Devices (CSWDM Research Center funded by DARPA @ In. P-and Ga. As-based Optical Microresonator Devices (CSWDM Research Center funded by DARPA @ UCSB) Active WG Structure 1. 9 mm Passive WG Structure 1. 9 mm 2265 A Common WG Core MICROELECTRONICS GROUP

Digital So. C ASIC Examples Personal Digital Assistants (Application Processors and Hardware Accelerators) Digital Digital So. C ASIC Examples Personal Digital Assistants (Application Processors and Hardware Accelerators) Digital Cameras/Camcorders (Image/Video Processing/Compression Systems) Cellular Phones (Baseband Processors, Application Processors and Hardware Accelerators) Entertainment Devices (Game Station (Graphics Processors), MP 3 Player (Audio Processors), Set-Top Box (Video Processing, Security)) Storage Devices (Hard Disk Controllers, RAID Controllers) Biometric Devices (Image Processing, Cryptography) Networking Devices (Switches, Routers) Automobiles (Engine Control, Lane Departure Warning Systems) MICROELECTRONICS GROUP

H. 264 / MPEG 4 Part 10 Video Compression Standard • The latest video H. 264 / MPEG 4 Part 10 Video Compression Standard • The latest video compression standard • Performs 50% better than the next best standard • Standardized by both ISO and ITU • Targets a broad range of applications, e. g. wireless video, digital TV, video-on-demand, DVD The improved quality of H. 264 requires intense computational power making it a very exciting challenge for real-time implementation ! MICROELECTRONICS GROUP

H. 264 / MPEG 4 Part 10 Encoder Transfor Current Frame (Fn) Reference Frame(s)(F'n-1) H. 264 / MPEG 4 Part 10 Encoder Transfor Current Frame (Fn) Reference Frame(s)(F'n-1) Reconstructed Frame (F'n) m Quant Inverse Transform Inverse Quant CAVLC Motion Estimation Mode Decision Intra Prediction Deblocking Filter • Designed and Implemented Modules • Forward Transform and Quant, Inverse Transform and Quant, CAVLC • Module Implementations in Progress • Motion Estimation, Intra Prediction, Deblocking Filter, Mode Decision MICROELECTRONICS GROUP

Arm Processor and Xilinx FPGA based Prototype Platform Xilinx FPGA Board Motherboard MICROELECTRONICS GROUP Arm Processor and Xilinx FPGA based Prototype Platform Xilinx FPGA Board Motherboard MICROELECTRONICS GROUP Xilinx Virtex II FPGA Arm Processor