Company Presentation – September 2012
Contents ¨ ¨ Company Overview Enpirion Technology Enablers of High Density Power. So. C Featured Products Back-up · · Product Quality/Reliability Supply Chain Summary Key Contract Manufacturers Currently Supported Power. So. C Differentiation: Quantifying Ease of Design Proprietary and Confidential | 2 |
Power. So. C Highly Integrated Power System-On-Chip Target Markets Integrated: - Power FETs - PWM Controller - Compensation Circuit - Inductor Enterprise • <=15 V DC-DC switching regulators • 300 m. A to 15 A • standard product & ASSP • www. enpirion. com Storage/SSD Hardware/Power Designer Challenges Test & Measurement Embedded/ Industrial Optical Networking Power. So. C Benefits Ø Increasing # of power rails Ø More function in smaller form factors Ø Noise sensitivity & lower power budgets Ø Time-to-market Pressures; fewer resources Ø While improving Cost & Reliability! Proprietary and Confidential Telecom ü High efficiency, smallest size ü Excellent noise/transient performance ü Simple, low risk power design ü Highest reliability, fewest components | 3 |
Enpirion: Focused on “Power Done Right!” ¨ The Leader of Integrated Power IC Solutions driving the miniaturization of DC-DC power systems · The only semiconductor company with all key enabling analog power technologies · Broad patent & IP portfolio - 45 issued + 25 pending · Private fab-less semiconductor company since 2001 ¨ Our products lead the discrete-to-integrated transition in the multi-billion dollar power IC market · Growing 7 times faster than the power IC market Fabrication ¨ Our Power, Your Innovation · Our power enables customers to maximize innovation without compromise. · Smallest, coolest, fastest, easiest, most reliable integrated power IC solutions Proprietary and Confidential R&D | 4 | Sales & Support Test & Assembly
Broad Market Demand for Uncompromised Power Enterprise Telecom Network Router Server Backhaul Optical Transport Storage Array Wireless Access Cloud Computing Increased density; uncompromised efficiency Smart Phones, IPTV, Tablets Increased density; uncompromised reliability Highest Power Density Combined with High Efficiency Low Thermals, Noise, Ripple Fast TTM Affordable Reliability Industrial Controllers Test & Measurement Embedded Computing Solid State Drives Automation & monitoring sophistication, many SKUs Increased density; uncompromised TTM & noise Proprietary & Confidential Storage Memory capacity, I/O speed, & Reliability Increased density; uncompromised TTM | 5 |
Target Markets & Our Value Proposition Markets Key Applications Enterprise Servers NIC cards Storage Controllers Office Automation Embedded, Industrial DSL/GPON CPE, MSAN & Gateways Cellular Base Stations Storage Revenue 26% Ease of Use Small Footprint Reliability 21% Reliability Small Footprint Energy Efficiency | 6 | 12% Small Footprint Ease of Design Reliability Solid State Drives USB 3. 0 Pen Drives Secure USB sticks Proprietary and Confidential Value Proposition Small Footprint Energy Efficiency Performance Reliability Embedded Computing, Test & Measurement Telecom Key Customers 25%
Key Enablers of High Density Power. So. C High Frequency IC Technology 3 Focused Technology Developments Power Packaging & Construction Magnetics Engineering DC-DC System Engineering & n sis g ion on tin lat ller ign aly ity ctio u n il ati ro s es le b m nt lid e A n T S Si Se Sta Co n De Va tio tag tor ain i o uc m uc r S ac ati rod Ind ap we ns Do P e C pe Po Tim om C n ctio ele Proprietary and Confidential | 7 | Delay Box
Enpirion’s Power Technology Roadmap 2004 -2010 2011 2012 2014 10 V 0. 25 um CMOS w/ LDMOS (up to 20 MHz ) 20 V 0. 18 um CMOS w/ LDMOS (up to 15 MHz ) Semiconductor Process 40 V 0. 18 um LDMOS (up to 10 MHz ) Magnetics Wire Copper on Wound Ferrite SMT Chip Open Bar Closed Bar Alloy on Silicon Copper on Alloy Hybrid Cores Inductor On Silicon Gen 6 Bumped Die RDL Gen 7 Monolithic Chip Scale Packaging Gen 1 Gen 2 Laminate Leadframe Proprietary and Confidential Gen 3 Stacked Gen 4 Clips | 8 | Gen 5 Spiral
Enpirion FET Technology = Efficiency + High Density Efficiency vs. Load Current @ Vin=5. 0 V Efficiency vs. Load Current @ Vin=3. 3 V 90% 80% Efficiency (%) 100% 90% Efficiency (%) 100% 70% 60% 90% Line >90% Efficiency 70% 60% 50% Vout= 1. 8 V 40% 0 1 2 3 4 5 6 Load Current (A) 7 6 V, 0. 25 u LDMOS 40% 8 0 1 2 3 4 5 6 7 8 Load Current (A) 6 V, 0. 25 u LDMOS 12 V, 0. 18 u LDMOS State of the art products built with industry’s fastest performing power FET technology Proprietary and Confidential | 9 |
Enpirion Power. So. C = Uncompromised Power. So. C Enpirion 75 mm 2 1. 85 mm height 94% @ Peak Modules/PSi. P Discrete Regulators Competitor A Competitor B Competitor C 4 -6 x larger area 2. 5 x taller 94% @ Peak 4 -5 x larger area 1. 25 x taller 92% @ Peak 7 x larger area 2 x taller 96. 5% @ Peak Highest Density without Compromising Performance, Reliability, Cost Proprietary and Confidential | 10 |
Enpirion Power. So. C Uncompromised Power Smallest Solution Footprint • 50 to 80% size reduction; very low profile Increased Reliability; Lower Total Cost • Fully simulated/characterized/validated/production tested power system • >35, 700 years MTBF (10 x improvement); FIT 3. 2 • True Industrial-rated; No de-rate, heat sink, airflow • Fewer components/Higher assembly yield High Performance + Low Noise • • Very High Efficiency: up to 97% Low EMI & Conducted noise (10 d. B margin) Up to 95% less ripple Secondary filtering not required Ease-of-use • • Simple Design Flow; nearly 100% 1 st pass success 45% fewer Design steps Significantly less exposure to design iteration Fully-validated PCB files Proprietary and Confidential | 11 |
FEATURED PRODUCTS Proprietary and Confidential | 12 |
Select Featured Products – 5 V Part Number Description Package Size (mm) L W H Solution Size Est. (mm 2) Device Capacity 5 V Input Power. So. C Product Offering EP 5348 QI Ultra-Small Power So. C, 8 MHz, "LDO Killer" 2. 00 1. 75 0. 90 20 0. 4 A 5 MHz Power. So. C, VID 2. 50 2. 25 1. 10 20 0. 6 A EP 53 A 7 x. QI 5 MHz Power. So. C, VID, "light load mode" 3. 00 1. 10 21 1. 0 A 5 MHz Power. So. C, VID 3. 00 1. 10 21 1. 0 A EN 5311 QI 4 MHz Power. So. C, VID 4. 00 5. 00 1. 10 40 1. 0 A EP 53 F 8 QI 4 MHz Power. So. C, VID 3. 00 1. 10 40 EN 5322 QI 4 MHz Power. So. C, VID 4. 00 6. 00 1. 10 60 EN 5337 QI 5 MHz Power. So. C 4. 00 7. 00 1. 85 75 3. 0 A EN 5339 QI Low Profile 4. 00 6. 00 1. 10 60 3. 0 A EN 6337 QI "High Efficiency" Power. So. C 4. 00 7. 00 1. 85 75 3. 0 A EN 6347 QI "High Efficiency" Power. So. C 4. 00 7. 00 1. 85 75 EN 5364 QI 4 MHz Power. So. C 8. 00 11. 00 1. 85 160 Low Cost 6 A 5. 50 10. 00 3. 00 160 "High Efficiency" Power. So. C 8. 00 11. 00 3. 00 195 EN 5394 QI 4 MHz Power. So. C 8. 00 11. 00 1. 85 190 EN 63 A 0 QI "High Efficiency" Power. So. C 10. 00 11. 00 3. 00 227 6. 0 A EN 6360 QI 6. 0 A EN 5367 QI EP 53 A 8 x. QI EP 5358 x. UI 0. 6 A 20 1. 10 2. 25 2. 50 5 MHz Power. So. C, VID, "light load mode" EP 5357 x. UI Proprietary and Confidential | 13 | 1. 5 A 2. 0 A 4. 0 A 8. 0 A 9. 0 A 12 A
Select Featured Products – 12 V Part Number Description Package Size (mm) L W H Solution Size Est. (mm 2) Device Capacity 12 V Input Power. So. C Product Offering EN 2340 QI 4 A Power. So. C 8. 00 11. 00 3. 00 191 4. 0 A EN 23 F 0 QI Proprietary and Confidential 9 A Power. So. C 15 A Power. So. C 8. 00 10. 00 12. 00 11. 00 13. 00 191 235 308 | 14 | EN 2390 QI 6 A Power. So. C EN 2360 QI 6. 0 A 9. 0 A 15 A
Select Featured Products – Application Specific Package Size (mm) Part Number Description L W H Solution Size Est. (mm 2) Device Capacity DDR VTT Power. So. C Product Offering EV 1320 DDR VTT, Low Vin Power So. C Solution 3. 00 0. 55 40 EV 1340 DDR VTT, Low Vin Power So. C Solution 10. 00 5. 50 3. 00 125 EV 1380 DDR VTT, Low Vin Power So. C Solution 11. 00 8. 00 3. 00 200 Note: Availability dates for yet to be released products subject to change. Proprietary and Confidential | 15 | 2 A 8 A 5 A
EV 1320 High Efficiency 2 A VTT Converter DDR Memory Termination | 16 | Specifications: ¨ Sources/Sink up to 2 A ¨ VDDQ Input Voltage Range: 0. 95 V – 1. 8 V ¨ Output Voltage = ½ VDDQ; tracks VDDQ ¨ 40 mm 2 total solution size Features ¨ ¨ Proprietary and Confidential | 16 | Solution complies with JEDEC for DDR 2/3/4 Ultra high 96% peak efficiency Parallel up to 4 devices for 8 A VTT load High reliability; 4. 1 FITs; 28, 200 years MTBF
EV 1320 Competitive Comparison: Uncompromised Power! DDR Memory Termination (VTT) Power Options Linear Regulator Enpirion EV 1320 Converter Switching regulator Solution Size (mm 2) ~88 40 ~200 - 300 Efficiency @ Peak (%) 50 96 88 to 92 Power Loss @ 2 A (W) 1. 8 0. 08 ~0. 2 Relative Power Loss at 2 A 24 x x ~2. 6 x =>1 x >2 x Published Price @ 1 K Nearly 2 x efficiency of a VTT LDO in a smaller footprint and =< cost Proprietary and Confidential | 17 |
EP 5348 UI Tiny 400 m. A DCDC Specifications: • 400 m. A Minimum Output Current • Input Voltage Range: 2. 4 V – 5. 5 V • Output Voltage Range: 0. 6 V – (VIN-0. 2 V) • Output Voltage Programming • Tiny, 14 -pin QFN Package • Solution Footprint: 20 mm 2 Features: • 66 m. W/mm 2 Solution Power Density • Compatible with Noise Sensitive RF • Over-current Protection • Thermal Protection: 150 C/15 C • Under-voltage Lock-Out 2 mm x 1¾mm x 0. 9 mm QFN Proprietary and Confidential | 18 |
EN 5339 QI 3 A Low Profile DCDC Specifications: • Input Voltage: 2. 4 V – 5. 5 V • Output Voltage: 0. 8 V – 3. 3 V • 3% accuracy over Line, Load, and Temp • VOUT Programming • 3 A Continuous Output Current Solution Footprint: 60 mm 2 Features: • Pin Compatible with EN 5322 QI • High Efficiency; 95% Peak • Very Low Ripple • Over-current Protection: 5 A Typical • Thermal Protection: 155 C/15 C • Under-voltage Lock-Out • Enable and POK • 4 mm x 6 mm x 1. 1 mm QFN Package Proprietary and Confidential | 19 |
EN 6337(3 A) / 47(4 A) DC-DC w/ LLM Specifications: • Input Voltage Range: 2. 375 V – 6. 6 V • Output Voltage Range: 0. 75 V – (VIN-0. 5 V) • 2% Output Accuracy (line, load, temp) • Minimum Output Current • 3 A – EN 6337 QI (@2 MHz) • 4 A – EN 6347 QI (@3 MHz) Features: • Solution Footprint: 75 mm 2 • 95% peak efficiency • Low Ripple • Over-current Protection • Under-voltage Lock-Out • Light Load Mode • Enable and POK • Directly interchangeable with EN 5337 QI • Sync to External Clock 4 mm x 7 mm x 1. 85 mm QFN Proprietary and Confidential | 20 |
EN 5367 QI “Cost Optimized” 6 A DCDC Specifications: • Input Voltage Range: 2. 5 V – 5. 5 V • Output Voltage Range: 0. 6 V – (VIN-VDO) • 3% Output Accuracy (line, load, temp) • Resistor Divider VOUT Programming • 6 A Minimum Output Current • Solution Footprint: 160 mm 2 Features: • High efficiency up to 93% • Low Ripple • Excellent Transient Recovery • Programmable Soft start • Over-current Protection • Under-voltage Lock-Out • Enable and POK • Sync to External Clock 10 mm x 5. 5 mm x 3. 0 mm QFN Proprietary and Confidential | 21 |
Proprietary and Confidential | 22 |
EN 2300 12 V Product Family Overview EN 2340 QI EN 2360 QI EN 2390 QI EN 23 F 0 QI Max. Load (A) 4 6 9 15 Input Voltage 4. 5 to 14 Output Voltage 0. 75 to 5 0. 60 to 3. 3 Package Size (mm) 8 x 11 x 3 0. 60 to 5 10 x 11 x 3 12 x 13 x 3 Solution area (mm 2) 191 235 308 Proprietary and Confidential | 23 |
EN 2300 Family Features Common Features ¨ Integrated inductor, MOSFETs, Controller ¨ Efficiency up to 94% ¨ 2% Voltage Output Accuracy (line, load, temp) ¨ Input Voltage Range: 4. 5 V – 14 V ¨ Resistor Divider Vout Programming ¨ Operating temperature range: -40 o. C to 85 o. C without airflow/lead de-rating ¨ Excellent total AC + DC regulation ¨ Frequency Synchronization (External Clock) ¨ Output Enable Pin and POK Signal ¨ Programmable soft start ¨ Protections: programmable over-current, UVLO, thermal Scalability Features ¨ EN 2340 and EN 2360 are pin compatible ¨ EN 23 F 0 may be paralleled – up to 4 devices, 60 A (see next page) Proprietary and Confidential | 24 |
EN 23 F 0 Parallel Operation Up to 4 x 15 A EN 23 F 0 devices can be paralleled for high load applications Proprietary and Confidential | 25 |
EN 2300 Competitive Comparison 12 V DC-DC POL Power DC-DC Alternatives (@ 15 A) 12 V DC-DC Discrete Regulator Modules/ PSi. P Enpirion Power. So. C Solution Size (mm 2) >650 500 308 Solution Height (mm) 8 >4 3 Efficiency @ Peak (%) 95 92 94 Ripple (m. Vp-p) 24 15 15 # of Components >30 16 16 Estimated Solution Cost @ 1 K 0. 8 x 2 x 1 x >2 x Space Savings with Low Noise, Low Total Cost without compromising Efficiency, Ease of Design and Reliability Proprietary and Confidential | 26 |
Got Footprint, Performance, Reliability Challenges? DDR Non-Volatile DIMM PCIe RAID Controller + SSD ‘s PCIe Quad NIC Server Blade AV Receiver Atom PCIe server board PCIe Security Processor Enterprise SSD Notebook SSD Get Power Done Right - Enpirion Power. So. C! Intel Atom Module USB Cellular Data Card USB 3. 0 SSD Embedded PC Module Digital Receiver Compact PCI DSP Card Proprietary and Confidential | 27 |
Back-up
Enpirion Power So. C has High Reliability ¨ Enpirion fully characterizes the integrated inductor/regulator pair ¨ This removes significant risk from the power supply design ¨ Enpirion Power So. C undergoes IC level testing ¨ FIT rate = 3. 2 ¨ @ 55 degrees C, 0. 7 e. V activation energy, 60% confidence level, based on HTOL data collected to date ¨ MTBF ~ 35, 700 years (312. 5 M hours) Proprietary and Confidential | 29 |
Quality, Reliability & Environmental Management System ¨ Enpirion deploys a Total Quality Management System · ISO 9001: 2000 Certified · Sony Green Partners ¨ Enpirion utilizes a proven fabless model with world-class global suppliers: · ISO 9001/ TS 16949 Certified · ISO 14001 Certified and Ro. HS Compliant · Sony Green Partners ¨ Enpirion Power. So. Cs maintain high reliability · System level performance with IC Level Reliability · Product design and qualification based on established industry standards & practices (JEDEC, JESD, …) · FIT rate = 3. 2 (MTBF ≈ 35, 700 years) · Long Term Reliability ensured by Manufacturing Process Controls and Long Term Reliability Monitoring ¨ Enpirion Environmental Management System includes: · · · · · Follows ISO 14001 Principles Sony Green Partner Certified Ro. HS (EU Directive 2002/96/EC) WEEE (Directive 2202/96/EC) Lead Free assembly compatible, 10 sec/260°C reflow profile JIG 101 PFOS/PFOA Ban (EU Directive 2006/122/EC) Halogen Free (Bromine + Chlorine) Sony SS-00259 Proprietary and Confidential | 30 |
Customer Quality Issues & Failure Analysis Failure Mode Analysis Flow • Device Analysis Request Form Customer Request • Component Supplier / Manufacturing Subcontractor • Problem Report Number Assigned • Automated Tester Failure Report Final Response < 15 days • Failure Analysis and Corrective Action Receipt of Failure Verification Initial Response < 2 days • Manual Tester • Hot / Cold / THB Environmental Chambers • Visual Inspection Internal Analysis • Decapsulation • Cross Section / Delayering Non-destructive Testing • X-ray Radiography • Analytical (SEM, Auger, FIB etc. ) • C-SAM Analysis • Optical Inspection • Curve Trace • Active Circuit Probe Proprietary and Confidential • Optical Inspection Subcontracted Services | 31 |
Supply Chain Summary ¨ ¨ Enpirion utilizes a Fabless semiconductor manufacturing model Finished wafers are procured from wafer fabrication facilities in Korea Final products are assembled, tested, and drop shipped from factories in Asia Order entry, planning, scheduling, shipment release occur in the USA IC Controller CMOS 8” Wafers IC Controller Wafer Test Korea Malaysia, Taiwan, Thailand Assembly Module Package Test Module Package Malaysia, Taiwan, Thailand Strategic Die Bank Strategic Inventory Inductors Japan/Taiwan 7 weeks Proprietary and Confidential Finished Goods & Shipping Drop ship 3 weeks 1 week | 32 | 1 week Lead Time 12 Weeks
Key Contract Manufacturers Currently Supported ¨ >75 CM/ODM relationships ¨ Benchmark Electronics ¨ Celestica ¨ Flextronics ¨ Foxconn Technology Group ¨ Jabil Circuit ¨ Plexus Corp. ¨ Sanmina-SCI Corp. ¨ Quanta ¨ Zinwell Proprietary and Confidential | 33 |
QUANTIFIED EASE-OF-DESIGN Proprietary and Confidential | 34 |
Design Flow Comparison: 3 DC-DC Topologies Common Pre-Design Steps (6) Detailed Design Steps ~6 >18 Steps ~14 Steps steps Enpirion Power. So. C Design Flow (~12) DC-DC Regulator Design Flow (~20) Delay Traditional Discrete Design Flow (>24 steps) Enpirion Power. So. C = Faster Design Time & High Probability of 1 st Pass Success Proprietary and Confidential | 35 |
Enpirion Power. So. C Simplied Design Steps Step 1 Step 2 Step 3 Step 4 Step 5 Step 6 • Review Power. So. C Specifications vs. Identified Requirements • Select Device • Select Components using Datasheet: Cin, Cout, Small Signal Components • Accommodate for Load Change/Scope Creep • PCB Design Using Validated /Guaranteed Design Files • Prototype Testing At least 40% fewer steps (i. e. 8 less) Significantly (~1/3) lower exposure to design iteration Proprietary and Confidential | 36 |
Quantitative Comparison of Power. So. C vs. DC-DC Regulator Design Effort Source Darnell Group * Sized for 1 DC-DC power rail Pwr. So. C/PSi. P reduces complexity & significantly improves time to market by 45%! Proprietary and Confidential | 37 |
Скачать презентацию Company Presentation September 2012 Contents
d05995faf14f75b991e796a6896efb3c.ppt