An Aberration Corrected Photoemission Electron Microscope at the Advanced Light Source Experimental Systems Group J. Feng 1, A. A. Mac. Dowell 1, R. Duarte 1, A. Doran 1, E. Forest 2, N. Kelez 1, M. Marcus 1, D. Munson 1, H. A. Padmore 1, K. Petermann 1, S. Raoux 3, D. Robin 1, A. Scholl 1, R. Schlueter 1, P. Schmid 1, J. Stöhr 4, W. Wan 1, D. H. Wei 5 and Y. Wu 6 1)Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA 2)High Energy Accelerator Research Organization, 1 -1 Oho, Tsukuba, Ibaraki 3050810, Japan 3)IBM, Almaden Research Center, 650 Harry Road, San Jose, CA 95120 USA 4)Stanford Synchrotron Radiation Laboratory, P. O. Box 20450, Stanford, CA 94309, USA 5) SRRC, No. 1 R &D Rd. VI, Hsinchu 300, Taiwan 6)Department of Physics, Duke University, Durham, NC 27708, USA Abstract A new ultrahigh-resolution photoemission electron microscope called PEEM 3 is being developed at the Advanced Light Source. An electron mirror combined with a sophisticated magnetic beam separator is used to provide simultaneous correction of spherical and chromatic aberrations. PEEM 3 electron mirror has four rotationally symmetric electrons and gives three free knobs to adjust the focal length, the chromatic and the spherical aberrations so that a wide aberration region can be covered for all the operation modes of objective lens. PEEM 3 magnetic separator has double mirror symmetry configuration and images its entrance plane 1: 1 in its exit plane. A further enormous advantage of the aberration correction is the increase of electron transmission. The goal of the PEEM 3 project is to achieve the highest possible transmission of the system at resolutions comparable to our present PEEM 2 system and to enable significantly higher resolution, albeit at the sacrifice of intensity. We have left open the possibility to add an energy filter at a later date, if it becomes necessary driven by scientific need to improve the resolution further. The instrument will be installed on an elliptically polarized undulator beamline and will be used for the study of complex materials at high spatial and spectral resolution. PEEM 3 Concept PEEM 3 microscope consists of objective lens, electric-magnetic dodecapole, magnetic beam separator, electron mirror, transfer and projector lens. Variable beam sizes on sample from 3 micron to 50 micron are carried out by a pair of bendable K-B mirror. Additionally, a UV-lamps and a laser system will be mounted to the sample chamber. The critical components of PEEM 3 are the electron mirror aberration corrector and aberration-free magnetic beam separator. PEEM 3 Endstation An elliptically polarized undulator (EPU) at the straight sector 11 of the ALS will be used to produced in-plan linear, perpendicular linear, left and right handed circularly polarized radiation with continuous change of ellipticity. A variable line space (VLS) plane grating monochromator beamline will provide soft x-ray in the spectral range from 100 e. V to 1500 e. V. PEEM 3 Layout The beam separator is of so-called double mirror symmetry for each quadrant of the magnet to cancel all the second-order geometric aberrations. The imaging property of the beam separator is equivalent to that of a telescopic four round lens. The object side focal plane of the first lens is transferred with unit magnification into the image side focal plane of the fourth lens. The specification of the separator is given in table 1. PEEM 3 Performance In our model to determine the resolution of PEEM 3, the secondary electron distribution is used. We create a statistical ensemble of electrons with initial energy and angle spread and track the electron beam distribution weighted with the probability anywhere in the system. The resolution is defined as 68% in intensity of the point spread function. The diffraction effect is calculated for each energy electron and summed up incoherently to yield diffraction Airy pattern. Operating at 20 k. V and 2 mm working distance, the point resolution for 100% transmission reaches 50 nm with the mirror corrector, a significant reduction from that of 440 nm without correction. The best resolution can be achieved is 5 nm at 2% transmission.
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