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Version 1. 0 MOSFETs Version 1. 0 MOSFETs

MOSFET Portfolio Performance & Strategy MOSFET Portfolio Performance & Strategy

Business Objective To consistently achieve above-market PROFITABLE growth, utilizing our innovative and cost-effective PACKAGING Business Objective To consistently achieve above-market PROFITABLE growth, utilizing our innovative and cost-effective PACKAGING technology, by leveraging PROCESS expertise and design excellence to deliver high quality MOSFET PRODUCTS.

Where We Compete 100 Automotive 50 Drain Current (Id) System Power 20 § Electronic Where We Compete 100 Automotive 50 Drain Current (Id) System Power 20 § Electronic Power Steering § Anti Lock Braking Systems § Relay Drivers § High Intensity Discharge Lighting § Inter Module Communication § Solenoid driver § DC/AC Inverters § Low Power DC 2 DC Power Management 10 Battery Portable § Notebook PC § Digital Camera § Cell Phone § PDA § Portable 5 Motor Control Industrial § DC Fan Control § H Bridge Applications § Spindle Control in HDD § Class D Audio § AC/DC Adaptors § Telecom Line Switching § Vo. IP Instrumentation 2 10 20 50 100 Voltage 200 300

Diodes MOSFET Portfolio: Performance Versus the Market Diodes MOSFET Portfolio Outperforms the Market Diodes Diodes MOSFET Portfolio: Performance Versus the Market Diodes MOSFET Portfolio Outperforms the Market Diodes MOSFET Portfolio growth is underpinned: § A focus on product § § innovation Relentless reduction of costs Close customer relationship

MOSFET Portfolio: Overview eht fo sdn. amsudni evitomotuh yrt ed ytilibailer hgi a § MOSFET Portfolio: Overview eht fo sdn. amsudni evitomotuh yrt ed ytilibailer hgi a § Portfolio to cover the majority of MOSFET requirements. § In-house packaging to provide wide selection of competitive packaging options. § Ro. HS and Halogen free materials to meet latest industry environmental requirements. § AECQ 101 qualification to meet the DIOFET is a trademark of Diodes Incorporated

A Wide and Evolving Portfolio BVDSS (V) SOT-963 DFN 2 -8 SOT-563 SOT-523 SOT-323 A Wide and Evolving Portfolio BVDSS (V) SOT-963 DFN 2 -8 SOT-563 SOT-523 SOT-323 pin SOT-363 SOT-23 SC-59 SOT-26 SOT-25 SOT-223 SOT-89 TSSOP-8 L MSOP-8 DPAK (TO-252) TO-220 ITO 220 AB/S E-Line aa a a a 600 200/450 100 a a 70/80 50/60 aa aa a a a a a a a a a a a aa a a a aa a 35/45 30 a 20 -20 -35/45 -50/60 -70/80 -100 -200/450

MOSFET Product Spotlight MOSFET Product Spotlight

DFN 1006 Portfolio: Probably the Smallest MOSFET Available The Diodes Advantage § Small footprint DFN 1006 Portfolio: Probably the Smallest MOSFET Available The Diodes Advantage § Small footprint The DFN 1006 -3 occupies 0. 6 mm 2 enabling designers to reduce PCB utilized while maintaining performance. The DFN 1006 -3 provides an equivalent or better performance than SOT 723 but occupies only 40% of the PCB area. The DFN 1006 -3 provides an equivalent performance to many SOT 23 yet has a footprint that is 13 times smaller. § Low profile The DFN 1006 -3 has an off-board height of 0. 4 mm (UFB 4) or 0. 5 mm (UFB) making it ideal for thin profile consumer electronic products. § Thermally efficient package Low junction to ambient thermal resistance (Rthj-a) support power dissipation up to 1. 3 W under continuous conditions. Low Rthja enables DFN 1006 to replace larger less efficient leaded packages such as SOT 723, SOT 523, SOT 323 while maintaining or improving performance. § Low RDSON The DMP 3010 LPS has been designed to withstand the high pulse avalanche energy that can be induced by inductive loads. Part Polarity VDS (V) VGS (±V) DMN 26 D 0 UFB 4 N 20 8 DMP 210 DUFB 4 P -20 8 DMN 2300 UFB 4 N 20 8 PD @ 25º (W) 8 0. 35 ID @ 25º (W) ESD Diode (Y/N) VTH (V) Min RDS(on) max Ohms at VGS = @10 V @4. 5 V @2. 5 V Qg (nc)Typ. @1. 8 V @1. 5 V @4. 5 V Ciss (p. F) Typ 0. 47 - 0. 6 - 3 4 6 10 - 17 0. 47 - - -0. 5 - 5 7 10 15 - 14 1. 3 Y 0. 5 - 175 220 280 - 1. 6 64 DMP 21 D 0 UFB P -20 -0. 8 - DMN 3730 UFB 4 N 30 12 0. 47 1. 03 Y 0. 5 - - 450 400 560 600 730 900 - - 1. 6 64 64 DMN 3484 UFB 4 N 30 12 0. 47 - - 0. 5 - 270 400 500 - 2 70 DMP 3795 UFB 4 P 30 12 0. 47 - - -0. 5 - 460 600 800 - 2 70 DMN 62 D 1 SFB 4 N 60 20 0. 47 - - 0. 8 1850 2100 - - - 1. 6 64

ZXMS 6006 DG/SG and ZXMS 6006 DT 8 Self-protected MOSFETs raise protection levels for ZXMS 6006 DG/SG and ZXMS 6006 DT 8 Self-protected MOSFETs raise protection levels for inductive loads The Diodes Advantage § Low Thermal Resistance The SM 8 package has a thermal resistance 30% lower than competing SO 8 solutions, enabling cooler running more reliable solutions. § Excellent RDS(ON) Minimize the conduction losses through the device, ideal for high efficiency power management applications. § Short Circuit Protection Device protects both itself and the load from over current conditions. § Short Circuit Protection Particularly important when driving inductive loads, to protect against over-voltage breakdown.

Dual DIOFET delivers plug-and-play efficiency boost for point-of-loads converters The Diodes Advantage § Plug-and-Play Dual DIOFET delivers plug-and-play efficiency boost for point-of-loads converters The Diodes Advantage § Plug-and-Play Solution High-side MOSFET and low side DIOFET co-packaged in SO 8 to provide single, simple solution. § Low RDS(ON) The low RDS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs. § Low VSD(ON) of the integrated Schottky The monolithically integrated Schottky has a forward voltage (VSD) that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. § Integrated Schottky has low Qrr The low Qrr of the integrated Schottky reduces body diode switching losses. § Lower operating temperature DIOFET operates at a temperature 5% lower than that of competing solutions. Reduced operating temperature minimizes conduction losses in surrounding components and increase reliability. § Low Qgd/Qgs ratio A lower gate capacitance ratio than competing solutions reduces the risk of shoot-through or cross conduction currents at high frequencies. § Avalanche rugged These MOSFETS have been designed to withstand the high pulse avalanche energy that can be induced by the output inductor during switching transitions.

Power. DI® 5060: DMP 3010 LPS Increased performance and reduced PCB space The Diodes Power. DI® 5060: DMP 3010 LPS Increased performance and reduced PCB space The Diodes Advantage § Low thermal resistance The Power. DI 5060 package has a typical Rthj-c of 2. 1ºC/W which is 10 times lower than the familiar SO 8 package. This superior thermal performance improves power dissipation, reduces MOSFET junction temperature, enabling cooler, more reliable running. § Low profile package The Power. DI 5060 has a package that is <1. 1 mm making it ideal for thin applications. § Low RDS(ON) The low typical RDS(ON) of the DMP 3010 LPs ensures that on state losses are kept to a minimum during load switching and battery charging. § Avalanche rated The DMP 3010 LPS has been designed to withstand the high pulse avalanche energy that can be induced by inductive loads. § AECQ 101, ‘Green’ and Ro. HS compliant The DMP 3010 LPS is qualified to AECQ 101 standard and is Ro. HS compliant. RDS(on) max (mΩ) VDS Part DMP 3010 LPS VGS ESD Diode ID @25ºC VGS(th) Ciss Qg min @ VGS Typ (n. C) Configuration Type (V) (±V) (Y/N) (A) 10 V 4. 5 V (V) (p. F) @10 V Single P 30 20 N 15 7. 5 10 1. 1 6324 126. 2 Power. DI is a registered trademark of Diodes Incorporated

MOSFET H-Bridges optimize design of DC motor control and inverter circuits The Diodes Advantage MOSFET H-Bridges optimize design of DC motor control and inverter circuits The Diodes Advantage This new MOSFET H-Bridge portfolio can be used to replace 4 single devices (SOT 23) or two complementary devices (SO 8) in D. C. or motor control and inverter applications. The benefits that this portfolio brings to the end application are: § Simplify designs One MOSFET H-Bridge can replace two dual SO 8’s, reducing PCB area footprint by 50%. § Reduce component count One MOSFET H-Bridge can replace two dual SO 8’s reducing component count and PCB area. § Reduce inventory cost Only one component needs to be stocked instead of 2 or 4.

Space-Saving DFN 2020 Package MOSFET solutions save space and improve performance The Diodes Advantage Space-Saving DFN 2020 Package MOSFET solutions save space and improve performance The Diodes Advantage § Save space With a footprint of just 2 mm 2, the DFN 2020 package occupies 55% less board space than larger 3 mm 2 packaged solutions. § Enables thinner applications The DFN 2020 has an off-board height of 0. 5 mm enabling the design of lower profile applications. § Reduced component count Combines two discrete devices in one small form factor package, reducing component count. VDS Part Package Configuration VGS Type SBR (V) (±V) RDS(on) max Ohms at VGS = VGS(th) (V) Capacitance (p. F) IDS (A) PD (W) 25ºC 10 V 2. 5 V 1. 8 V min. max. Ciss DMP 2160 UFDB DFN 2020 Dual P N -20 ± 12 -3. 2 1. 4 ** 80 100 140 -0. 4 -0. 9 627 DMS 2220 LFDB DFN 2020 Single P Y -20 ± 12 -3. 5 1. 4 ** 95 120 86* 0. 45 -1. 3 632 DMS 2120 LFWB DFN 3020 Single P Y -20 ± 12 -2. 9 1. 5 ** 95 120 150 0. 45 -1. 3 632

Focus Product Focus Product

Focus Product DIOFET: Raising Efficiency in Po. L Converters DIOFET – What is it? Focus Product DIOFET: Raising Efficiency in Po. L Converters DIOFET – What is it? § DIOFET monolithically integrates a MOSFET and Schottky into a single die. Where is DIOFET used? § DIOFET is used in the synchronous MOSFET positions in low-cost, high performance Point of Load (Po. L) converters in consumer products such as Set top Boxes, Notebooks and Netbooks. What is DIOFET targeted at? § Standard MOSFETs of comparable RDS(ON). § MOSFET/Schottky combination of comparable RDS(ON). What is DIOFETs key selling feature? § DIOFET provides a more efficient solution, at a lower temperature, than comparable competing MOSFET/Schottky solutions and standard MOSFETs.

Focus Product DIOFET: Product Portfolio DIOFET – Features and Benefits Low RDS(ON) § The Focus Product DIOFET: Product Portfolio DIOFET – Features and Benefits Low RDS(ON) § The low RDS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs. Low VSD of the integrated Schottky § The monolithically integrated Schottky has a forward voltage (VSD) that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. Integrated Schottky has low QRR § The low QRR of the integrated Schottky reduces high side MOSFET switching ON loss. Avalanche rugged § These MOSFETS have been designed to withstand the high-pulse avalanche energy. Part DMS 3014 SSS DMS 3015 SSS Package Configuration VDS (V) VGS (V) Id (A) Pd (w) Typical RDS(on) @ 10 (m. Ohm) Ciss (p. F) Qg (n. C) SO 8 N plus Schottky 30 ± 12 11. 2 3. 1 10 11 1849 16 SO 8 N plus Schottky 30 ± 12 11 1. 5 8. 5 9. 5 1276 30. 6

Focus Product Point-of-Load Converters: Sources of Power Loss High-side power losses are due to: Focus Product Point-of-Load Converters: Sources of Power Loss High-side power losses are due to: § Switching losses Low-side power loss are due to: § Conduction losses in low side MOSFET § Body diode conduction in low side MOSFETs are the main source of losses in a Po. L § Reverse-recovery charge losses due to low side MOSFET body diode

Focus Product DIOFET: Comparison Against Competing MOSFET/Schottky Solutions DIOFET increases efficiency of system power Focus Product DIOFET: Comparison Against Competing MOSFET/Schottky Solutions DIOFET increases efficiency of system power Po. L by 0. 5 to 1% compared with competing devices at load current > 4 A 19 V input to 5 V output conversion

Focus Product DIOFET: Comparison Against MOSFET with Comparable RDS(ON) DIOFET increases efficiency of system Focus Product DIOFET: Comparison Against MOSFET with Comparable RDS(ON) DIOFET increases efficiency of system power Po. L by up to 1% compared with standard Trench MOSFET with similar RDS(ON) 19 V input to 3 V output conversion

Focus Product DIOFET: Increases Efficiency, Lowers Temperature Application Benchmark: 19 V input to 5 Focus Product DIOFET: Increases Efficiency, Lowers Temperature Application Benchmark: 19 V input to 5 V output power conversion DIOFET Standard Trench MOSFET Thermal camera images of high-side and synchronous MOSFETs during application benchmark § Temperature of DIOFET is 7ºC less than that of a standard Trench MOSFET § Reduction in operating temperature improve system reliability

Focus Product DIOFET: Summary DIOFET Improves Po. L efficiency due to: Low RDS(ON) § Focus Product DIOFET: Summary DIOFET Improves Po. L efficiency due to: Low RDS(ON) § The low RDS(ON) of the DIOFET minimize the conduction losses associated with low-side synchronous MOSFETs. Low VSD of the integrated Schottky § Losses associated with body diode CONDUCTION of the low synchronous MOSFET are minimized due to the lower (VSD) of the DIOFET monolithically integrated Schottky has a forward voltage that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. Integrated Schottky has low QRR § The low QRR of the integrated Schottky reduces high side MOSFET switching losses. DIOFET Improves the robustness and reliability of Po. L converters by: § By providing an improvement in efficiency while operating at a lower temperature. For every 10 degree reduction in operating temperature system reliability doubles. § DIOFET is avalanche rated enabling it to withstand high pulse inductive energy from inductors or transformers. Such avalanche ratings improve the robustness of the Po. L.

MOSFET Applications MOSFET Applications

Applications MOSFET for LED Current Balancing Function § MOSFET regulates LED § § current Applications MOSFET for LED Current Balancing Function § MOSFET regulates LED § § current during normal operation. MOSFET is switched off under LED string short-circuit condition to protect the system power supply. PWM dimming of MOSFET to control brightness level. Requirements § VDS 100 V or greater. § Low RDS(on) – reduces conduction § § loss and improves efficiency. Low QG for fast switching enables high BLU PWM dimming resolution. Small thermally efficient package – SOT 223, Power. DI 5. Key Products § ZXMN 10 A 08 G § ZXMN 10 A 11 G § ZXMN 10 A 25 G

Applications MOSFETs for LED Current Balance Function Package Configuration Polarity VGSS (V) Part ID Applications MOSFETs for LED Current Balance Function Package Configuration Polarity VGSS (V) Part ID PD RDS(on) max VDSS (±V) (A) (W) 10 V VGS(th) Ciss Qg Qg Typ (n. C) 4. 5 V (V) (p. F) @4. 5 V @10 V 2 -4 857 - 17. 7 497 - 7. 7 274 - 5. 5 138 - 2. 9 169 - 6. 6 (mΩ) @ VGS ZXMN 10 A 25 G SOT 223 Single N 100 20 4 2 125 150 ZXMN 10 A 08 G SOT 223 Single N 100 20 2. 9 2 250 300 ZXMN 10 A 08 G SOT 22 -6 Single N 100 20 1. 9 1. 7 250 300 ZXMN 10 A 11 G SOT 223 Single N 100 20 7. 1 2. 1 350 450 ZVN 4310 G SOT 223 Single N 100 20 0. 8 0. 6 500 750 ZXMN 15 A 27 G SOT 223 Single N 150 25 TBC 650 - ZXMN 15 A 27 E 6 SOT 23 -6 Single N 150 25 TBC 650 - ZXMN 15 A 24 E 6 SOT 23 -6 Single N 150 25 TBC 2600 - 2 -4 50 - 2 ZXMN 20 B 28 G SOT 223 Single N 100 20 7. 7 10. 1 66 97 1 -3 1313 - 26 Note: Products highlighted in blue are die repackage possibilities – contact Diodes for further information 2 -4 2 -4 2 -4

Applications 30 V P-Channel MOSFET for Asynchronous Rectification Application Function § The MOSFET is Applications 30 V P-Channel MOSFET for Asynchronous Rectification Application Function § The MOSFET is used as power switch in asynchronous buck switching regulators (converters) to step the voltage down to a lower level. § Asynchronous buck switching regulators that feature an external P-channel MOSFET are cheaper and quicker to realise than their N-channel counterparts, due to the lower required component count. § Buck regulators that utilize a P-channel MOSFET are less efficient than those that utilize external N channel MOSFETs. Requirements § VDS 30 V or greater. § Low RDS(on) – reduces conduction § loss and improves efficiency. Low QG to minimize switching losses at high frequency. Key Products § DMP 3056 LDM § ZXMP 6 A 17 G

Applications 30 V and Greater P-Channel MOSFETs for Asynchronous Rectification Package Configuration Polarity PD Applications 30 V and Greater P-Channel MOSFETs for Asynchronous Rectification Package Configuration Polarity PD VGS(th) Ciss Qg Qg (mΩ) @ VGS Typ (n. C) 4. 5 V (V) (p. F) @4. 5 V @10 V VGSS (V) Part ID RDS(on) max VDSS (±V) (A) (W) 10 V DMP 3020 LSS SO-8 Single P - 30 20 -12 2. 5 14 17 -1 to -3 1802 15. 3 30 ZXMP 3 F 37 N 8 SO-8 Single P -30 20 -8. 3 -10. 7 25 41 -1. 3 to -3 1678 16. 5 31 DMP 3056 LDM SOT 23 -6 Single p -30 20 -4. 3 1. 25 45 56 -1 to -2 722 6. 8 13. 7 DMP 4025 LK 3 TO 252 Single P -40 20 TBC 25 40 -1 to -2 1643 14 33. 7 DMP 4025 SSS S 0 -8 Single P -40 20 TBC 25 40 -1 to -2 1643 14 33. 7 DMP 4050 SSS SO-8 Single P -40 20 -6. 0 2. 8 50 79 -1 to -3 674 6. 9 13. 9 DMP 4051 LK 3 TO 252 Single P -40 20 -5. 2 2. 1 50 79 -1 to- 3 674 6. 9 13. 9 ZXMP 4 A 16 G SOT 223 Single P -40 20 -6. 4 3. 9 60 100 -1 to -3 1007 - 26 ZXMP 6 A 17 E 6 SOT 223 Single P -60 20 -3 1. 7 125 190 -1 to -3 637 9. 0 17. 7 ZXMP 6 A 17 G SOT 223 Single P -60 20 -4. 1 3. 9 125 190 - 1 to – 3 637 9. 0 17. 7 ZXMP 6 A 17 N 8 SO-8 Single P --60 20 -3. 4 2. 5 125 190 -1 to - 3 637 9. 0 17. 7

Applications MOSFETs for Low-Voltage DC Motor Control Function § To convert voltage into rotational Applications MOSFETs for Low-Voltage DC Motor Control Function § To convert voltage into rotational energy. § MOSFET or IGBTs have in general Key Products § ZXMC 4559 DN 8 Key Products § ZXMC 10 A 816 DN 8 superseded the bipolar transistor as the switching element as they are both Voltage controlled devices making the gate drive circuitry simpler. § ZXMHC 3 F 381 N 8 § Motor, V, I and P characteristics and the Vcc stalled current (up to six times steady state) determine the MOSFET that is selected. Requirements § VDS 30 V or greater. § Low RDS(on) – reduces conduction § loss and improves efficiency. Low QG to minimize switching losses at high frequency. Q 3 Q 1 M Motor Control IC Q 2 Q 4

Applications Summary of MOSFET Portfolio: DC Motor Control Applications Zone of Competition H-Bridges +/- Applications Summary of MOSFET Portfolio: DC Motor Control Applications Zone of Competition H-Bridges +/- 100 V Summary SM 8 30 V MOSFETs for 5 to 12 V supplies SO 8 60 V MOSFETs for 24 V supplies Dual devices up to +/- 100 V DFN 832 Single devices up to +/-100 V BVdss SOT 23 0 1 2 TSOT 23 -5 5 100 V MOSFETs for 48 V supplies SO 8 SM 8 SO 8 8 DPAK 10 15

Applications Key Products for Motor Control RDS ON Max ZXMHC 3 F 381 N Applications Key Products for Motor Control RDS ON Max ZXMHC 3 F 381 N 8 ZXMHC 3 A 01 N 8 ZXMHC 6 A 07 N 8 ZXMHC 10 A 07 N 8 VGS V Part BVDSS ID @ 25 OC VGS 2*N 30 2*P 2*N Ciss [email protected] Qg [email protected] Vgs=10 V [email protected] 5 V [email protected] V Vds=10 V A m. W pf nc 20 5 60 35 430 9 -30 30 20 -4. 1 2. 7 80 180 55 120 670 194 12. 7 3. 9 2*P 2*N -30 60 20 20 -2. 1 1. 8 330 350 210 250 204 166 5. 2 3. 2 2*P 2*N -60 20 -1. 4 600 400 233 5. 1 100 20 1. 1 900 700 138 2. 9 2*P -100 20 -0. 9 1450 1000 141 3. 5 Polarity 20 Package SO 8 Features Benefits § 2 N plus 2 P in one SOIC package. § Replaces two complementary SO 8 s or four SOT 23 discretes. § BVDSS up to 100 V. § Reduces footprint by 50%. § Reduces inventory cost. § Benefits addresses applications operating up to 48 V.

Applications MOSFETs for Vo. IP Applications Function VDC § MOSFET is the switching element Applications MOSFETs for Vo. IP Applications Function VDC § MOSFET is the switching element in the SLIC (Subscriber Line Interface circuit) D/DC converter that boosts DC voltage to required VBAT level. DC-DC converter TIP Linefeed VBA circuitry VTR T SLIC Controller Requirements § VDS 60 v or greater. § High pulse current capability. § Avalanche Rugged – able to withstand the high pulse energy during transformer switching transition. Key Products § DMN 6068 SE § ZXMN 15 A 27 K § ZXMN 20 B 28 K RING Twisted pair line to phone

Applications Part MOSFET Portfolio for Vo. IP Applications Package VDSS (V) PD (W) ID Applications Part MOSFET Portfolio for Vo. IP Applications Package VDSS (V) PD (W) ID (A) RDS(on) max (mΩ) @ VGS IDM (A) 6 V - 10 V 750 Ciss Typ (p. F) Qg Typ (n. C) @5 V Qg Typ (n. C) @10 V 358 8. 1 12. 9 Yes (Note 2) EAS UIS (Note 1) ZXMN 20 B 28 K TO 252 -3 L 200 10. 2 2. 3 17. 3 5 V 780 ZXMN 15 A 27 K TO 252 -3 L 150 9. 5 2. 6 17. 2 - - 650 169 - 6. 6 Yes (Note 3) ZXMN 10 A 25 K TO 252 -3 L 100 9. 9 6. 4 21. 0 - 150 125 859 9. 6 17. 2 No ZXMN 10 A 08 G SOT 223 100 3. 9 2. 9 11. 0 - 300 250 405 4. 2 7. 7 No ZXMN 10 A 11 K TO 252 -3 L 100 8. 5 3. 5 9. 9 - 450 350 274 3. 0 5. 4 No ZXMN 10 A 11 G SOT 223 100 3. 9 2. 4 7. 9 - 450 350 274 3. 0 5. 4 No ZXMN 7 A 11 K TO 252 -3 L 70 8. 5 6. 1 17. 0 190 - 130 298 4. 4 7. 4 No ZXMN 7 A 11 G SOT 223 70 3. 9 3. 8 10. 0 190 - 130 298 4. 4 7. 4 No DMN 6068 LK 3 TO 252 -3 L 60 8. 5 22. 2 100 - 68 502 5. 5 10. 3 Yes (Note 4) DMN 6068 SE SOT 223 60 5. 6 3. 7 20. 8 100 - 68 502 5. 5 10. 3 Yes (Note 4) DMN 6066 SSS SO 8 60 2. 8 5. 0 23. 0 97 - 66 502 5. 5 10. 3 Ask (Note 5) DMN 6066 SSD Dual SO 8 60 2. 1 4. 4 17. 0 97 - 66 502 5. 5 10. 3 Ask (Note 5) Notes: 1. Single pulse avalanche energy (EAS) testing using an Unclamped Inductive Switch (UIS) test in production. 2. EAS = 73 m. J with UIS conditions of L = 4. 83 m. H, IAS = 5. 5 A, RG = 25Ω, VDD = 100 V, starting TJ = 25°C. 3. EAS = 55 m. J with UIS conditions of L = 5. 95 m. H, IAS = 4. 3 A, RG = 25Ω, VDD = 100 V, starting TJ = 25°C. 4. EAS = 37. 5 m. J with UIS conditions of L = 3. 0 m. H, IAS = 5. 0 A, RG = 25Ω, VDD = 50 V, starting TJ = 25°C. 5. Rugged by design. Not tested, but if required 100% UIS test can be implemented same as Note 4.

Applications Self-Protected MOSFET for Automotive Applications Function D § To provide load switching function Applications Self-Protected MOSFET for Automotive Applications Function D § To provide load switching function at DC frequencies while providing integral protection such that the device protects itself and the load from supply-borne transients. Requirements § § § VDS >40 V. Over-voltage protection. Over- current protection. Over-temperature protection. ESD protection. Over-voltage Protection IN d. V/dt limit Human body ESD protection Over-current protection Overtemperature protection. Logic S Key Products § ZXMS 6004 FFTA § BSP 75 G/BSP 75 N

Applications Self-Protected MOSFET for Automotive Applications RDS(on) max (mΩ) @ VIN VDS (S/C) Configuration Applications Self-Protected MOSFET for Automotive Applications RDS(on) max (mΩ) @ VIN VDS (S/C) Configuration TAB BVDSS (V) ID (A) VIN = PD (W) 3 V 5 V 10 V VIN = 5 V ZXMS 6004 DT 8 Dual N/A 60 1. 2 2. 3 0. 6 0. 5 - ZXMS 6005 DG Single Drain 60 2 1. 6 0. 25 0. 2 ZXMS 6005 DT 8 Dual N/A 60 1. 8 1. 6 0. 25 BSP 75 G Single Drain 60 1. 4 2. 5 BSP 75 N Single Source 60 1. 2 ZXMS 6001 N 3 Single Source 60 ZXMS 6002 G Single Drain ZXMS 6003 G Single ZXMS 6004 SG EAS (m. J) Package 36 210 SM 8 - 36 490 SOT 223 0. 2 - 36 210 SM 8 - 0. 675 0. 55 36 550 SOT 223 1. 5 - 0. 675 0. 55 36 550 SOT 223 1. 1 1. 5 2 0. 675 - 36 550 SOT 223 60 1. 4 2. 5 - 0. 675 0. 55 36 550 SOT 223 Drain 60 1. 4 2. 5 - 0. 675 0. 55 36 550 SOT 223 Single Source 60 1. 3 1. 6 0. 5 - 36 480 SOT 223 ZXMS 6004 DG Single Drain 60 1. 3 3 0. 6 0. 5 - 36 490 SOT 223 ZXMS 6004 FF Single N/A 60 1. 3 1. 5 0. 6 0. 5 - 36 90 SOT 23 F ZXMS 6004 SG Single Source 60 1. 3 1. 6 0. 5 - 36 480 SOT 223 ZXMS 6004 DT 8 Dual N/A 60 1. 2 2. 3 0. 6 0. 5 - 36 210 SM 8 ZXMS 6005 DG Single Drain 60 2 1. 6 0. 25 0. 2 - 36 490 SOT 223 ZXMS 6005 SG Single Source 60 2 1. 6 0. 25 0. 2 - 36 490 SOT 223 ZXMS 6005 DT 8 Dual N/A 60 1. 8 1. 6 0. 25 0. 2 - 36 210 SM 8 ZXMS 6006 DG Single Drain 60 2. 8 3 0. 125 - 36 490 SOT 223 ZXMS 6006 SG Single Source 60 2. 8 3 0. 125 - 36 490 SOT 223 ZXMS 6006 DT 8 Dual N/A 60 - 2. 1 0. 125 - 36 210 SM 8 Part

Applications MOSFET for LED Lighting Function § MOSFET is used as an external switching Applications MOSFET for LED Lighting Function § MOSFET is used as an external switching element with Buck or Boost converters such as ZXLDxxx series. Requirements § VDS 40 V or greater. § Low RDS(on) – reduces conduction § § loss and improves efficiency. Low QG to minimize losses at fast switching high BLU PWM dimming resolution. Small thermally efficient package – SOT 223, SOT 23 -6. Key Products § ZXMN 6 A 08 E 6 § DMN 6068 SE

Applications MOSFET for LED Lighting Polarity ID V Part BVDSS RDS(on) PD @ TA=25ºC Applications MOSFET for LED Lighting Polarity ID V Part BVDSS RDS(on) PD @ TA=25ºC @ VGS=4. 5 V @ VGS=10 V A W m. Ohms Package ZXMN 6 A 07 F N 60 1. 2 0. 8 350 250 SOT 23 ZXMN 6 A 08 E 6 N 60 3. 1 1. 7 150 80 SOT 23 -6 ZXMN 6 A 08 G N 60 5. 3 3. 9 150 80 DPAK DMN 6068 SE N 60 5. 6 3. 7 100 68 DPAK ZXMN 6 A 11 G N 60 3. 8 3. 9 180 120 SOT 223 ZXMN 7 A 11 G N 70 4. 4 3. 9 190 130 SOT 223 ZXMN 10 A 08 E 6 N 100 1. 9 1. 7 250 300 SOT 23 -6 ZXMN 10 A 08 G N 100 2. 9 2 250 300 SOT 223

Applications MOSFET for Desktop PC Applications Function §High power density, high-efficiency synchronous rectification circuits Applications MOSFET for Desktop PC Applications Function §High power density, high-efficiency synchronous rectification circuits (known as Voltage Regulator Modules) are used to deliver a low voltage and high current to the microprocessor efficiently. §High-side synchronous MOSFETs feature a low figure of merit (RDS(ON)*Qg). Whereas the low-side MOSFETs feature low RDS(ON). §Additionally, the low-side MOSFET should have low VF and fast Qrr to minimize body diode losses. Requirements § § § VDS 30 V. Low RDS(on) – reduces conduction loss and improves efficiency. Low Gate Charge (Qg) to minimize switching losses and improve efficiency. High current handling capability. Thermally efficient package – TO 252 / Power. DI 5060. CPU Power § DMN 3009 LK 3 § DMN 3006 LK 3

Applications MOSFET for Desktop PC Applications Package Configuration Polarity VGSS (V) Part ID PD Applications MOSFET for Desktop PC Applications Package Configuration Polarity VGSS (V) Part ID PD RDS(on) max VDSS (±V) (A) (W) 10 V 4. 5 V (mΩ) @ VGS Ciss Qg Qg Typ (n. C) (V) (p. F) @4. 5 V @10 V VGS(th) DMN 3009 LK 3 TO 252 Single N 30 20 16. 5 1. 68 9. 8 16 1. 4 -2. 5 TBD TBD DMN 3006 LK 3 TO 252 Single N 30 20 20 1. 68 6. 8 12 1. 5 -2. 5 TBD TBD

Applications MOSFET for Notebook System Power Applications Function § § § High power density, Applications MOSFET for Notebook System Power Applications Function § § § High power density, high-efficiency and low synchronous rectification circuits( often referred to as System Power) are used to deliver a low voltage and high current to the microprocessor efficiently. High-side synchronous MOSFETs feature a low figure of merit (RDS(ON)*Qg). Whereas the low-side MOSFETs feature low RDS(ON). Additionally, the low-side MOSFET should have low VF and fast Qrr to minimize body diode losses. body losses. Requirements § § § VDS 30 V. Low RDS(on) – reduces conduction loss and improves efficiency. Low Gate Charge (Qg) to minimize switching losses and improve efficiency. Low VSD, Qrr body diode of synchronous MOSFET (Diodes DIOFET address this requirement). High current handling capability. Thermally efficient package – Power. DI 3333 Power. DI 5060. System Power § DMG 4496 SSS § DMS 3015 SSS DDR Power § DMS 3016 SSS

Applications MOSFET for Notebook System Power Applications System / DDR Power MOSFET Part Package Applications MOSFET for Notebook System Power Applications System / DDR Power MOSFET Part Package Configuration Schottky Diode VGSS (V) Polarity ID PD RDS(on) max VDSS (±V) (A) (W) 10 V 4. 5 V (mΩ) @ VGS Ciss Qg Qg Typ (n. C) (V) (p. F) @4. 5 V @10 V VGS(th) DMG 4496 SSS SO 8 Single N N 30 25 10 1. 42 21. 5 29 0. 8 -2. 4 493. 5 4. 7 10. 2 DMS 3015 SSS SO 8 Single Y N 30 20 11 1. 55 11. 9 14. 9 1 -2. 5 1276 14. 3 30. 6 DMS 3016 SSS SO 8 Single Y N 30 12 9. 8 1. 54 13 16 2 -2. 3 1849 18. 5 43 N N 30 12 9. 5 1. 19 15 18 1 -2. 3 1476 18. 7 16 Y N 30 20 9. 5 1. 19 23 33 1 -2. 4 1932 5 42 DMS 3019 SSD SO 8 Dual

Applications MOSFET for Notebook System Power Applications Function § In order to minimize battery Applications MOSFET for Notebook System Power Applications Function § In order to minimize battery power MOSFETs are used as load switches to switch in or out of circuit various functions within the Notebook. Requirements § VDS 30 V. § P-channel for switching positive § rails, N-channel for switching negative rails. Low RDS(on) – minimizes conduction losses, particularly important for those used in series with the battery. Battery / Load Switch Battery Protection § DMP 3160 L § DMP 3100 L § DMG 4435 SSS § DMG 4413 LSS

MOSFET for Notebook Applications Load Switch Power MOSFET Part Package Configuration Schottky Diode PD MOSFET for Notebook Applications Load Switch Power MOSFET Part Package Configuration Schottky Diode PD Qg Qg Typ (n. C) (±V) (A) (W) 10 V 4. 5 V (V) (p. F) @4. 5 V @10 V (mΩ) @ VGS(th) Ciss VGSS (V) Polarity ID RDS(on) max VDSS DMG 4435 SSS SO 8 Single N P 30 25 7. 3 1. 3 20 29 1 -2. 5 1614 18. 9 35. 4 DMG 4413 LSS SO 8 Single N P 30 25 TBD TBD TBD - TBD DMP 3160 L SOT 23 Single N P 30 20 2. 7 1. 08 122 190 1. 3 -2. 1 227 - - DMP 3100 L SOT 23 Single N P 30 20 2. 7 1. 08 100 170 1. 3 -2. 1 227 - -

Applications MOSFET for Smart Phone Applications Function § MOSFETs are used to control the Applications MOSFET for Smart Phone Applications Function § MOSFETs are used to control the charge/discharge function of the battery park and are also used as load switches in various peripheral functions. Requirements § Small footprint, low-profile, § § § thermally efficient package. Low Vgsth. Low On-Resistance. Fast Switching Speed. Key Products § DMG 1012 T § DMG 1016 V § DMG 1026 UV § DMN 2400 VK Key Products § DMN 2300 UFB 4 § DMP 21 D 5 UFB 4 § DMN 3730 UFB 4 Key Products § DMG 5802 LFX

Applications Part DMN 2300 UFB 4 MOSFET for Smart Phone Applications Package DFN 1006 Applications Part DMN 2300 UFB 4 MOSFET for Smart Phone Applications Package DFN 1006 H 4 -3 Configuration ESD (KV) VGSS (V) Polarity ID PD RDS(on) max VDSS (±V) (A) (W) 4. 5 V 2. 5 V (mΩ) @ VGS Ciss Qg Qg Typ (n. C) (V) (p. F) @4. 5 V @10 V VGS(th) DMP 21 D 0 UFB 4 DMP 21 D 0 UFD DMN 3730 UFB 4 DFN 11212 -3 DFN 1006 H 4 -3 DFN 1212 -3 DFN 1006 H 4 -3 2 N 20 8 1. 3 0. 47 175 360 0. 45 - 0. 95 67. 6 0. 89 - Single 2 N 20 8 1. 3 0. 47 175 360 0. 45 -0. 95 67. 6 0. 89 - Single 3 P -20 8 -0. 77 0. 43 495 690 900 80 0. 91 - Single 3 P -20 8 -0. 86 0. 43 495 690 900 80 0. 91 - Single 1 N 30 8 460 560 730 65 1. 6 - N 20 6 0. 63 0. 28 400 500 0. 5 -1. 0 60. 67 736. 6 - N 20 6 0. 87 1. 55 400 500 0. 5 -1. 0 60. 67 736 - P DMN 2300 UFD Single -20 6 0. 64 0. 53 700 900 0. 5 -1. 0 59. 76 622 - DMG 1012 T SOT 523 Single 2 DMG 1016 V SOT 563 Dual 2. 5 DMG 1026 UV SOT 563 Dual 2 N 60 20 0. 4 0. 58 2100 - 0. 5 -1. 8 28 305 - DMN 2004 VK SOT 563 Dual 2 N 20 8 0. 54 0. 25 550 700 0. 5 -1. 0 150 - - DMP 21 D 0 UFB 4 DFN 1006 H 4 -3 Single 2 P -20 8 -0. 2 0. 35 5500 7500 0. 45 -1. 15 13. 72 - - DMP 21 D 5 UFB 4 DFN 1006 H 4 -3 Single 2 P -20 8 -0. 38 0. 35 1500 2500 0. 45 -1. 2 53. 7 - - DMP 58 D 0 LFB DFN 1006 -3 Single 2 P -50 20 -0. 18 0. 47 8000 - 0. 8 -2. 1 27 - - DMN 62 D 0 LFB DFN 1006 -3 Single 2 N 60 20 0. 1 0. 47 2000 2500 0. 6 -1. 0 28 305 - DMG 5802 LFX DFN 5020 Dual 2 N 24 12 6. 5 0. 98 15 20 0. 6 -1. 5 1066. 4 14. 5 31. 3

Product Road Maps Product Road Maps

Product Roadmap: Process Development Q 4 2010 Q 1 2011 Q 2 2011 Q Product Roadmap: Process Development Q 4 2010 Q 1 2011 Q 2 2011 Q 3 2011 Q 4 2011 100 V Process development for Adaptor and LED applications 600 V Process development – <1 Ω 600 V FET for SMPS and off-line applications 40 V, 60 V and 100 V DIOFET development LDMOS N and P channel development Q 1 2012

Product Roadmap: Overview Q 4 2010 Q 1 2011 Q 2 2011 Q 3 Product Roadmap: Overview Q 4 2010 Q 1 2011 Q 2 2011 Q 3 2011 Q 4 2011 20 V, 30 V, 60 V N & P channel DFN 1006 Portfolio 12 V P channel in DFN 1616 and DFN 2020 for Battery Protection Low Side Self-Protected MOSFET (Intelli. FET TM) – Range Expansion 40 V, 60 V low RDS(ON), avalanche rated, 175ºC MOSFETs for Automotive Applications Intelli. FET is a trademark of Diodes Incorporated Q 1 2012

Product Roadmap: Overview Q 4 2010 Q 1 2011 Q 2 2011 Q 3 Product Roadmap: Overview Q 4 2010 Q 1 2011 Q 2 2011 Q 3 2011 30 V & 40 V N & P channel MOSFETs packaged in Power. DI 3333 (New thermally efficient package) 12 V P channel in DFN 1616 and DFN 2020 for Battery Protection DFN 1212 (footprint compatible with SOT 723) Portfolio 30 V Power. DI 5060 N and P channel MOSFETs Q 4 2011 Q 1 2012

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