Описание презентации Physics of Semiconductor Devices Lecture 2. Carrier по слайдам
Physics of Semiconductor Devices Lecture 2. Carrier statistics in semiconductors A. V. Sogoyan
Contents: • Introduction to carrier statistics in solids. Fermi-Dirac distribution. Fermi level. • Intrinsic and extrinsic semiconductors. Donors and acceptors. • The dependence of Fermi level on the temperature and doping concentration.
Introduction to carrier statistics in solids At finite temperature, state occupation probability by electron is determined by Fermi-Dirac distribution function f(E): E F – Fermi level
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids Conduction and valence band density of states
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids Similarly,
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids
Introduction to carrier statistics in solids Free electron density as a function of temperature
Conclusions
Conclusions